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NAME：Peng Changsi

Career：Professor

Organization：School of Optoelectronic Science & Engineering

Degree：PhD (Sci. + Eng.)

Graduate School：Instit. Phys./Chn. Acad. Sci.(Chn) & ORC/TUT (Fin)

Email：changsipeng@suda.edu.cn

Office Location：

Tel：+86-13776041002

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Related teachers

Biography

  • Organization：School of Optoelectronic Science & Engineering
  • Tel：+86-13776041002
  • Gender：male
  • Email：changsipeng@suda.edu.cn
  • Post：
  • Office Location：
  • Graduate School：Instit. Phys./Chn. Acad. Sci.(Chn) & ORC/TUT (Fin)
  • Address：P.O.Box 161, No.1 Shizi Str., Suzhou, China
  • Degree：PhD (Sci. + Eng.)
  • PostCode：215006
  • Academic Credentials：
  • Fax：+86-512-65112232

Education

Education：

see "Resume".

Professional Experiences

Work Experience：

see Resume.

Overview

Resume：

Distinguished Professor Changsi Peng

TEL: (+86) 13776041002.

School of Optoelectronics Science and Engineering

Soochow University

P.O.Box 161, No.1 Shizi Street, Suzhou 215006, China

Email: changsipeng@suda.edu.cn.

Web (Chinese): http://web.suda.edu.cn/changsipeng_en.

Google scholar: https://scholar.google.com/citations?user=1lCaI7YAAAAJ&hl=en.

ResearcherID: C-2965-2017(http://www.researcherid.com/rid/C-2965-2017).

 

Education:

 

Doctorate of Engineering, ORC, TUT, Tampere, Finland

2004-2009

Dissertation

Dilute   nitride lasers: MBE growth and Device processing

Supervisor

Professor   Markus Pessa

 

 

Doctorate of Science, Institue of   Physics, CAS, Beijing, China

1993-1998

Dissertation

MBE   growth of Si/Ge materials and their optical properties

Supervisor

Professor   Junming Zhou

 

 

Bachelor of Science, Physics Department, Wuhan University, Wuhan, China

1985-1990

Thesis

Investigation   of rare-earth elements in Aluminum alloy

Supervisor

Professor   Shaojie Wang




 

Career History

 

2019.06-current

Visiting Professor

University of Bedfordshire, UK

2018.06-2019.05

Professor (50% part-time)

2011.03-2018.05

Visiting Professor

 

Developing EU research projects and cooperation.

 

 

2018.03-current

Visiting Professor, Sheffield University, UK

 

Based on the original research results on the growth of defect-free   and site-controlled semiconductor quantum dots by Prof. Changsi Peng’s group,   Prof. Mark Hopkinson from Sheffield University was granted with (1) UK EPSRC “Pioneer   Research and Skills” project in 2017: In-situ Interferometric Lithography:   New Nanostructure Array Preparation Technology, (EP/P027822/1, £955,000); (2)   EU H2020 “Future Emerging Technology(FET)” project: Nanoscale self-assembled   epitaxial nucleation controlled by interference lithography (NanoStencil, 767285,   €3,210,000).

 

 

2017.04

External Assessor on the Internal   Periodic Review Panel, Xi’an Jiaotong-Liverpool   University, Suzhou, China

 

Invited as External Assessor on the Internal Periodic Review Panel   for the Department of Electrical and Electronic Engineering at Xi’an Jiaotong-Liverpool   University.

 

 

2009.10-current

Distinguished Professor, Soochow University (SU), Suzhou, China

 

Invited as a distinguish professor by the School of   Optoelectronics Information Science and Engineering of SU. Heading a new initiative   focused on defect-free site-controlled epitaxial quantum dots (QDs) and nano   bionics. Defect-free site-controlled epitaxial QDs were achieved first in the   world. Largely enhanced the robustness of transparent superhydrophobic glass.   Developed a new superhydrophobic and superoleophilic copper mesh for   oil/water separation. Leading 1 EU project, 1-National Key R&D Project by   the Ministry of Science and Technology (MOST) (China), 1 NSFC (China)   project, and 1 key project by NSF of Jiangsu Province; Key partner of 1 EU   Horizon 2020 FET project, 1 UK EPSRC, and 2 international cooperation   projects by MOST (China) and TEKES (Finland).

 

 

2004.01-2009.04

Co-founder/Senior R&D Engineer, Epicrystals Co. Ltd., Tampere, Finland

 

Co-founding RGB laser projector spin-off company from Tampere   University of Technology (TUT), leading R&D on RGB semiconductor lasers.

 

 

2002.02-2009.10

Senior Researcher (staff)

TUT, Tampere, Finland

2001.02-2002.01

CIMO Postdoctoral Fellowship

 

Joined Optoelectronics Research Center (ORC), TUT, as a postdoc in   2001 and became a staff member (permanent research position) in 2002 engaging   in research for growth of III-V semiconductors materials by molecular beam   epitaxy (MBE) and processing of III-V semiconductors photonics devices,   nano-technology. Developed a new structure of dilute nitride materials for   reduction the heterostructures strain of heterostructures resulting in   decrease 80% of the threshold of laser, which was one of the best results in   the world. Invented a new dilute nitride material for reduction the local   strain resulting in 50 times stronger photoluminescence (PL) and 50% less of   laser threshold than conventional dilute nitride materials. Leading 2   research projects by Finland Academy and key partner of 1 EU FP6 project.

 

 

2000.07-2001.01

Associate Professor

Institute of Physics, Chinese Academy of   Sciences (CAS), Beijing, China

1998.07-2000.06

Assistant Professor

1993.09-1998.06

PhD student

 

Focused on material research of SiGe growth on Si substrate by MBE.   Discovered that with a new doping technology, room temperature PL was first   observed in the world for SiGe QDs on Si. Developed a new technology of   growing low temperature Si to largely suppress the threading dislocations in   the fully relaxed SiGe epitaxial layer on Si substrate, which is significant   for Si-based devices.

 

 

1999.12-2000.02

STA Research Fellow, Electro-Technology Laboratory, Tsukuba, Japan

 

Young scientist exchanging between China and Japan government.   Focused on semiconductor solar cells grown by MBE.

 

 

1990.07-1993.08

Office Director, Xinhe Stationery Co., LTD, Qingdao, China

 

Manager assistant of the technology department, secretary of   general manager, QC manager.








 

Lectures:

2010-current, Academic English for Postgraduates;

2010-current, Semiconductor Laser;

2011-current, Lectures on Optic Frontier;

2016-current, Experiments on General Physics.

 

Supervising Postgraduates(year of graduation/university):

PhD: Feng Zhang (2017/SU), Dayun Huo (2017/SU), Chunlei Tan (2016/TUT), Wei Zhang (2016/SU), Janne Pakkarinen (2009/TUT), Janne Konttinen (2006/TUT).

MSc: Xinning Yang (2020/SU), Lili Miu (2020/SU), Lei Dong (2020/SU), Weixiao Liu (2020/SU), Xiaoxing Zhang (2019/SU), Linyun Yang (2019/SU), Ming Yang (2019/SU), Chen Chen (2018/SU), Changwei Deng (2018/SU), Liang Gu (2018/SU), Chengyun Xu (2017/SU), Jiajia Song (2017/SU), Zhuhui Wu (2017/SU), Chao Xu (2017/SU), Xiaoxiang Guo (2016/SU), Yingjie Jiang (2016/SU), Quan Li (2016/SU), Chen Rong (2015/SU), Xianying Zhang (2015/SU), Weiping Liu (2014/SU), Xiaoyong Gu (2014/SU), Niko Laine (2004/TUT).

 

Appointments/Awards:

2019, Scientific Chinese, Person of the Year of 2018, China

2012, Six Major Talent Summit of Jiangsu Province, China;

2001, CIMO Scholarship for Excellence, Finland;

1999, STA Fellowship for Excellence, Japan Society for the Promotion of Science (JSPS);

1998, President Award for Excellence, CAS;

1995-1998, Outstanding Postgraduates, Institute of Physics, CAS;

1990, Outstanding Graduates, Wuhan University, China;

1985-1990, Scholarship for Excellence, Wuhan University, China;

1984, 2nd Prize, the First Chinese Mathematics Olympiad, China;

1984, 3rd Prize, the First Chinese Physics Olympiad, China.

9 Invited talks and 4 co-chairs in conferences.

Invited referee:

Natural Science Foundation of China (NSFC);

Dissertation Evaluation Committee of China;

Foundation of Post-doctorate of China;

Optics Society of China;

Jiangsu Provincial Department of Science and Technology, China;

“Nature Photonics” [Nature Publishing Group, UK];

“New Journal of Physics” [Institute of Physics (IOP), UK];

“Nanotechnology” [IOP, UK];

“Semiconductor Science and Technology” [IOP, UK];

“Journal of Optics A: Pure and Applied Optics” [IOP, UK];

“Journal of Applied Physics” [American Institute of Physics, (AIP), USA];

“Photonics Technology Letters” [IEEE, USA].

 

Standing in Research Community:

  • Publications:

    >180 papers in peer-reviewed journals and conferences, 1900 citations, H-index 21; 1 book (Springer), 4 chapters for 4 books each; 29 patent applications including 19 granted ones (1 in USA, 1 in France, 1 in Germany, 1 in UK, 1 in Finland, 1 in Spain, and 13 in China): on quantum dots, laser interference patterning, light guiding, graphene, and nano-bionics.

     

  • Projects leadership and partnership:

  1. Coordinator or Principle Investigator: EU FP7 (1), Academy Finland (AF) (2), National Key R&D Program of MOST, China (1), Natural Science Foundation of China (NSFC) (1), Key project by Department of Education (DOE) of Jiangsu Province, China (1), Talent awarding by Human Resources and Social Security (HRSS) of Jiangsu Province, China (1);

  2. Project co-leader: EU FP6 (1), Monistry of Science and Technology (MOST) (China)-TEKES (Finland) cooperation projects (2);

  3. Key partner (pioneer of the research): EU Horizon 2020 Future Emerging Technology (FET) (1), UK Engineering and Physical Sciences Research Council (EPSRC) (1).

Professional Service

Social Position：

Research

Research Field：

Teaching

Open Course：

Projects

Research Project：

see Resume.

Publications

Thesis：

Publication list of Changsi Peng（学术发表）

(Bolded name: as a supervisor of the research)（黑体姓名为导师）

 

Book and book chapters（学术专著）

Book（全书）:

  1. Novel Optical Technologies for Nanofabrication
    Qian Liu, Xuanming Duan, Changsi Peng, (ISBN: 978-3-642-40386-6, ISBN 978-3-642-40387-3 (eBook), DOI 10.1007/978-3-642-40387-3), Publisher: Springer (    2013.12)

     

    Book chapters（章节）:

  2. Laser Interference Lithography
    C. Tan, C.S. Peng, Ainara Rodriguez, M. Pessa, S. M. Olaizola, V. N. Petryakov, Yu. K. Verevkin, J. Zhang, Z. Wang, T. Berthou, S. Tisserand,     “Advances in Nanotechnology, 4” Chapter 6(ISBN: 978-1-61668-618-5), ed. Zacharie Bartul and Jérôme Trenor, Publisher Nova Science Publishers, (2010)

  3. Dilute nitrides: the material properties and laser performance
    C.S. Peng and M. Pessa.    “Nitrides and dilute nitrides: Growth, characterization and devices” Chapter 9 (ISBN: 978-81-7895-250-5), ed. J. Miguel-Sanchez, Publisher Transworld Research Network, pp. 229-264 (2007)

  4. GaInNAs Quantum Well Lasers
    W. Li, M. Pessa, T. Jouhti, C.S. Peng, E.-M. Pavelescu, chapter in Encyclopedia of Nanoscience and Nanotechnology, 3, edited by H.S.Nalwa, American Scientific Publishers, pp. 719-730 (2004)

  5. Extending the emission wavelength of GaInNAs/GaAs quantum well lasers beyond 1300 nm
    W. Li, J. Konttinen, T. Jouhti, C.S. Peng, E.-M. Pavelescu, M. Suominen, M. Pessa, An article in the book “Advanced Nanomaterials and Nanodevices” published by the Institute of Physics Publishing. IOP Publishing Ltd. 2003. ISBN: 0750309652, pp. 251-260 (2003)

     

    Patents（专利）

    Patents Granted（授权专利）:

  6. 磁贴式LED平板灯
     A magnetic strip LED panel light
    彭长四，方宗豹，张恒，ZL 201720004751.X（申请2017.01.04；授权2017.06.05）.

  7. 一种LED梳妆灯
     A LED dressing light
    彭长四，方宗豹，张恒，ZL 201720003665.7（申请2017.01.04；授权2017.06.13）.

  8. 一种基于三维多孔石墨烯超薄膜的垂直响应型气体传感器
     A vertical response gas sensor based on three-dimensional porous graphene ultrathin film
    王艳艳，彭长四，陈林森，ZL 201621352613.2（申请2016.12.11；授权2017.08.01）.

  9. 一种三维多孔石墨烯超薄膜气体传感器及其制备方法
     A method for     three-dimensional porous graphene ultra-thin film gas sensor and fabrication
    王艳艳，彭长四，陈林森，宋加加，ZL 201610959549.2（受理2016.10.27；授权2018.07.06）.

  10. 构建高沾附性超疏水表面的方法
    Method for constructing a highly adherent superhydrophobic surface
    石震武，吴竹慧，张锋，徐成云，彭长四，ZL 201610551383.0（受理2016.07.14；授权2018.05.11）.

  11. 一种触控模组
     A touch module
    彭长四，ZL 201620146494（受理2016.02.26；授权2016.09.07）.

  12. 一种油水分离器件的制备方法
     A method for preparing oil-water separation device
    彭长四，张锋，徐成云，吴竹慧，ZL 201610023802.3（申请2016.07.14；授权2018.05.08）.

  13. 一种自清洁光栅玻璃的制备方法
    A method for self-cleaning grating glass fabrication
    王艳艳，彭长四，浦东林，戎晨，李权，ZL 201510259253.5（申请2015.05.20；授权2017.05.24）.

  14. 一种基于还原氧化石墨烯的气体传感器及其制备方法
    A method for gas sensor based on reduced graphene oxide and fabrication
    王艳艳，彭长四，陈林森，张锋，元磊，ZL 201310178984.8（申请2013.05.15；授权2015.07.15）.

  15. 一种基于还原氧化石墨烯的气体传感器及其制备方法
    A method for gas sensor based on reduced graphene oxide and fabrication
    王艳艳，彭长四，陈林森，顾小勇，刘维萍，ZL 201210390063.3（申请2012.10.15；授权2014.07.16）.

  16. 基于石墨烯/聚苯胺杂化材料的气体传感器及其制备方法
    A method for gas sensor based on graphene/polyaniline hybrid material and fabrication
    王艳艳，彭长四，陈林森，张伟，ZL 201210390062.9（申请2012.10.15；授权2014.07.16）.

  17. 背光照明装置及液晶显示装置
    A backlighting device and liquid crystal display device
    张伟，彭长四，顾小勇，刘维萍，王艳艳，张锋，元磊，ZL 201210058173.X（申请2012.03.07；授权2014.07.16）.

  18. 一种激光干涉光刻系统
    A laser interference lithography system
    彭长四，董晓轩，张伟，顾小勇，周云，刘维萍，ZL 201110178877.6（申请2011.06.29；授权2014.05.28）

  19. 一种量子点材料的制作装置及制作方法
    A manufacturing apparatus and manufacturing method for quantum dot material
    彭长四
    中国：ZL 201110224270.7（申请2011.08.05；授权2015.07.15）;
    PCT: PCT/CN2012/078013 (2012.07.02)    ；
    美国：US 8,969,185 B2（申请2014.01.17；授权2015.03.03）;
    欧盟：2741315 (授权2019.04.24)（申请号12821709.8-1103，2014.01.17）.

  20. Sistema de litografia por interferencia de laser (Spanish)
     Yu.K. Verevkin, V.N. Petrykov, S.M. Olaizola, A.R. Gonzalez, I.A Olaizola, C.S. Peng, C. Tan, M. Pessa, Spain patent, No. 08775425.5-1226. PCT/ES2008000397

     

    Patents Issued（专利受理）:

  21. PDMS/C超疏水复合薄膜及其制备方法
     Method for PDMS/C superhydrophobic composite film and fabrication
    石震武，徐成云，张锋，吴竹慧，彭长四，201810607024.1（2018.06.13）.

  22. 原位无损剥离量子点的方法
     Method for in situ non-destructive stripping of quantum dots
    石震武，缪力力，杨琳韵，杨新宁，彭长四，201810556681.8（2018.06.01）.

  23. 一种基于MBE设备原位低温获得大尺寸Ga滴的方法
     Method for obtaining large-size Ga droplets based on in-situ low temperature of MBE equipment
    石震武，杨新宁，杨琳韵，缪力力，陈晨，霍大云，邓长威，彭长四，20181523864.X（2018.05.28）.

  24. 一种超疏水膜及其制备方法
     Method for superhydrophobic membrane and fabrication
    王艳艳，顾亮，张小兴，董磊，彭长四，201810298774（2018.04.03）

  25. 图形化生长量子点的方法
    A method for patterned growth of quantum dots
    石震武，杨琳韵，霍大云，邓长威，陈晨，彭长四，201710560071.0（2017.07.11）.

  26. 超疏水超亲油过滤膜及其制备方法和使用
    A method for superhydrophobic super-lipophilic filter membrane and fabrication
    石震武，张锋，吴竹慧，徐成云，彭长四，201710082404.3 (2017.02.16).

  27. 基于三维多孔石墨烯超薄膜的垂直响应型气体传感器及其制备方法
    A method for vertical response type gas sensor based on three-dimensional porous graphene ultra-thin film and fabrication
    王艳艳，彭长四，陈林森，201611135425.9 (2016.12.11).

  28. 一种多孔石墨烯气敏传感器及其制备方法
    A method for porous graphene gas sensor and fabrication
    王艳艳，彭长四，陈林森，宋加加，201610959550.5 (2016.10.27).

  29. 一种三维多孔石墨烯超薄膜及其制备方法
     A method for three-dimensional porous graphene ultra-thin film and fabrication
    王艳艳，彭长四，陈林森，宋加加，201810532912.1（2016.10.27）.

  30. 一种三维多孔石墨烯超薄膜气体传感器及其制备方法
    A method for three-dimensional porous graphene ultra-thin film gas sensor and fabrication
    王艳艳，彭长四，陈林森，宋加加，201610959549.2 (2016.10.27).

  31. 一种透明憎水光栅玻璃及其制备方法
     A method for preparing self-cleaning grating glass
    王艳艳，彭长四，申溯，李权，戎晨，201510259433.3 (2015.05.20).

  32. 一种基于还原氧化石墨烯的气敏传感器及其制备方法
    A method for gas sensor based on reduced graphene oxide and fabrication
    王艳艳，彭长四，刘艳花，陈林森，李权，201410680689.2 (2013.12.12).

  33. 基于碳纳米管-聚吡咯复合网络结构气敏传感器的制备方法
    Fabrication method for carbon nanotube-polypyrrole composite network structure gas sensor
    王艳艳，彭长四，刘艳花，霍大云，张先营，201310269209.3 (2013.06.28).

  34. 氧化石墨烯薄膜立式微纳结构气敏传感器及其制备方法
    A method for graphene oxide film vertical micro/nano structure gas sensor and fabrication
    王艳艳，彭长四，陈林森，张锋，201310136507.5 (2013.04.18).

     

    Peer Reviewed Papers（同行评审学术论文）:

    Journal papers（杂志论文）:

    As a 1st author（第一作者）:

  35. Nano Fabrication by Laser Interference
    C.S. Peng, C. Tan, W. Zhang,X.-Y. Gu,and W.-P. Liu, International Journal of Nanomanufacturing. 8 (3), pp. 212-220, (2012)

  36. Mechanism of Photoluminescence Blue Shift in InGaAsN/GaAs Quantum Wells during Annealing
    C.S. Peng, H.F. Liu, J. Konttinen, M. Pessa, J. Gryst Growth, 278, pp.259-263 (2005)

  37. Wet oxidation for detecting surface defect pits of AlGaAs related semiconductors
    C.S. Peng, J. Konttinen, T. Jouhti, H.F. Liu, M. Pessa,     J. Gryst Growth 274, pp. 138-143 (2005)

  38. High-performance singlemode InGaNAs/GaAs laser
    C.S. Peng, N. Laine, J.Konttinen, S.Karirinne, T.Jouhti, M.Pessa, IEE Electronics. Lett. 40 (10), pp. 604-605 (2004)

  39. InGaAsN/GaAs lasers Performance on Thermal Annealing
    C.S. Peng, H.F. Liu, J. Konttinen, S. Karirinne, T.Jouhti, M. Pessa, Physica Scripta, T114, pp. 159-160 (2004)

  40. A study and control of lattice sites of N and In/Ga interdiffusion in dilute nitride quantum wells
    C.S. Peng, W. Li, T. Jouhti, E.-M. Pavelescu, M. Pessa, J. Cryst. Growth 251, pp. 378-382 (2003)

  41. Diffusion at the interfaces of InGaNAs/GaAs quantum wells
    C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, Solid State Electronics47/3 pp. 431-435(2003)

  42. A new method to suppress the In diffusion of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
    C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, Thin Solid Films 428 pp.176-180 (2003)

  43. Suppression of interfacial atomic interdiffusion in GaInNAs/GaAs heterostructures grown by molecular beam epitaxy
    C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, Appl. Phys. Lett. 80 (25) pp. 4720-4722 (2002)

  44. 1.32-um GaInNAs / GaAs Laser With a Low Thereshold Current Density
    C.S. Peng, T. Jouhti, P. Laukkanen, E.-M. Pavelescu, J. Konttinen, W. Li, M. Pessa, IEEE Photon.Tech. Lett., 14 (3), pp. 275-277 (2002)

  45. Study of Ge0.96Si0.04 epilayers grown on Si (001)at high temperature
    C.S. Peng, H.Kawanami, Y.K.Li, G.H.Li, Q.Huang, and J.M.Zhou, J. Crystal Growth 227/228 pp. 786-790 (2001)

  46. The formation of dislocations in the interface of GeSi/low-temperature Si buffer grown on Si (001)
    C.S. Peng, Y.K.Li, Q.Huang, and J.M.Zhou J. Crystal Growth 227/228 pp. 740-743 (2001)

  47. Relaxed GeSi alloy grown on low-temperature buffers by MBE
    Chang-si Peng, Qi Huang, Junming Zhou, Yi H Zhang, CH Tung, TT Sheng, Jian Wang, Silicon-based Optoelectronics, 3630, pp. 231-237 (1999.3.19)

  48. Strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
    C.S. Peng, H.Chen, Z.Y.Zhao, J.H.Li, D.Y.Dai, Q.Huang, J.M.Zhou, Y.H.Zhang, C.H.Tung, T.T.Sheng, J.Wang, J. Crystal Growth 201/202 pp. 530-533 (1999)

  49. Relaxed Ge0.9Si0.1 alloy layers with low threading dislocation densities grown on low-temperature Si buffers
    C.S. Peng, Z.Y.Zhao, H.Chen, J.H.Li, Y.K.Li, L.W.Guo, D.Y.Dai, Q.Huang, J.M. Zhou, Y.H.Zhang, T.T.Sheng and C.H.Tung, Appl. Phys. Lett. 72 pp. 3160-3162 (1998)

  50. New optical properties of Ge self-organized quantum dots
    C.S. Peng, Q.Huang, Y.H.Zhang, W.Q.Cheng, T.T.Sheng, C.H.Tung and J.M.Zhou, Thin Solid Films 323 pp. 174-177 (1998)

  51. Optical properties of Ge self-organized quantum dots in Si
    C.S. Peng, Q.Huang, W.Q.Cheng, J.M.Zhou, Y.H.Zhang, T.T.Sheng and C.H.Tung, Phys. Rev. B 57 pp. 8805-8808 (1998)

  52. Improvement of Ge self-organized quantum dots by use of Sb surfactant
    C.S. Peng, Q.Huang, W.Q.Cheng, J.M.Zhou, Y.H.Zhang, T.T.Sheng and C.H.Tung, Appl. Phys. Lett. 72 pp. 2541-2543 (1998)

  53. GaAs-based InGaAsN Lasers
    Changsi Peng, Tomi Jouhti, Janne Konttinen, Markus Pessa, Bulletin of the American Physical Society (American Physical Society), 2005/3/22.

     

    As a supervisor of the research（导师指导）:

  54. Gas sensors based on assembled porous graphene multilayer frameworks for DMMP detection
    Yanyan Wang, Ming Yang, Weixiao Liu, Lei Dong, Da Chen, Changsi Peng, Journal of Materials Chemistry C, 7, 9248 (2019).

  55. Gas sensors based on chemically reduced holey graphene oxide thin films
    Ming Yang, Yanyan Wang, Lei Dong, Zhiyong Xu, Yanhua Liu, Nantao Hu, Eric Siu-Wai Kong, Jiang Zhao, Changsi Peng, Nanoscale Research Letters, 14, 218 (2019).

  56. Polymer Foam-Supported Chemically Reduced Graphene Oxide Conductive Networks for Gas Sensing
    J Song, Y Wang∗, F Zhang, Y Ye, Y Liu, X Zhou, L Chen, Changsi Peng, J. Nanosci. Nanotechnol., 18(4), 2965-70 (2018).

  57. Self-fibering growth in the soot-templated CVD coating of silica on mesh for efficient oil/water separation
    Feng Zhang, Zhenwu Shi, Chengyun Xu, Dayun Huo, Wei Zhang, Changsi Peng, Materials & Design, 154 pp.370-377 (2018.9.15)

  58. In situ lift-off of InAs quantum dots by pulsed laser irradiation
    Changwei Deng, Zhenwu Shi, Linyun Yang, Wei Zhang, Chen Chen, Lili Miao, Xinning Yang, Chinhua Wang, Linsen Chen, and Changsi Peng, Appl. Phys. Lett. 113, 083111 (2018).

  59. Polymer Foam-Supported Chemically Reduced Graphene Oxide Conductive Networks for Gas Sensing
    Jiajia Song, Yanyan Wang, Feng Zhang, Yan Ye, Yanhua Liu, Xiaohong Zhou, Linsen Chen, Changsi Peng, Journal of nanoscience and nanotechnology, 18 (4) pp.2965-2970 (2018.4.1)

  60. In-situ laser nano-patterning for ordered InAs/GaAs(001) quantum dot growth
    Wei Zhang, Zhenwu Shi, Dayun Huo, Xiaoxiang Guo, Feng Zhang, Linsen Chen, Qinhua Wang, Baoshun Zhang, and Changsi Peng, Appl. Phys. Lett. 112, 153108 (2018); doi: 10.1063/1.5016096.

  61. 分子束外延原位脉冲激光驱动金属 Ga-droplet 迁移的实现和研究
    Implementation of Ga-droplet migration by in-situ pulsed laser with molecular beam epitaxy
    D. Huo, Z. Shi, C. Xu, C. Deng, C. Chen, W. Zhang, C.S. Peng,     科学通报(Chinese Science Bulletin), 62(28) pp.3379-3384 (2017).

  62. Improvement of Properties of GaAs-based Dilute Nitrides by Beryllium Doping
    HUO Da-yun, SHI Zhen-wu, XU Chao, DENG Chang-wei, CHEN Chen, CHEN Lin-sen, WANG Wen-xin, PENG Chang-si, Chn J Luminescence    , 38(8) pp.1056-62 (2017).

  63. InGaAs/AlGaAs-量子阱红外探测器中势垒生长温度的研究
    Growth temperature of barrier in InGaAs/AlGaAs quantum well infrared detector (Chinese)
    D. Huo, Z. Shi, W. Zhang, S. Tang, C.S. Peng,     物理学报(Acta Physica Sinica), 66(6) (2017) 068501.

  64. Porous superhydrophobic and superoleophilic surfaces prepared by template assisted chemical vapor deposition
    Feng Zhang , Zhenwu Shi, Linsen Chen, Yingjie Jiang, Chengyun Xu, Zhuhui Wu, Yanyan Wang, Changsi Peng, Surface and Coatings Technology, 315C (2017) 385-390.

  65. Fabrication of transparent superhydrophobic glass with fibered-silica network
    Feng Zhang, Zhenwu Shi, Yingjie Jiang, Chengyun Xu, Zhuhui Wu, Yanyan Wang, Changsi Peng    , Applied Surface Science, 407 (2017) 526-531.

  66. Gas sensors based on layer-by-layer assembled graphene oxide and reduced graphene oxide
    Jiajia Song, Yanyan Wang*, Ming Yang, Feng Zhang, Yan Ye, Yanhua Liu, Linsen Chen, Changsi Peng    , Advances in Engineering Research, 103 (2016) 370-375.

  67. Facile assembly of graphene and titania on micro-structured substrates for superhydrophobic surfaces
    Quan Li, Yanyan Wang, Chen Rong, Feng Zhang, Yanhua Liu, Linsen Chen, Qinhua Wang, Changsi Peng, Ceramics International, 42 (2), (2016) 2829-2835.

  68. Effects of in-situ surface modification by pulsed laser on InAs/GaAs (001) quantum dot growth
    W. Zhang, Z. Shi, D. Huo, X. Guo, C.S. Peng, Acta Physica Sinica, 65(11) (2016) 117801.

  69. Periodic nanostructures produced on GaAs surface by UV pulsed laser interference (DOI: 10.1016/j.apsusc.2015.11.105),
    Wei Zhang, Dayun Huo, Xiaoxiang Guo, Chen Rong, Zhenwu Shi, Changsi Peng, Applied Surface Science, 360 (2016) 999-1002    .

  70. Ammonia gas sensors based on chemically reduced graphene oxide sheets self-assembled on Au electrodes
    Yanyan Wang, Liling Zhang, Nantao Hu, Ying Wang, Yafei Zhang, Zhihua Zhou, Yanhua Liu, Su Shen, Changsi Peng    , Nanoscale Research Letters, 9(1) (2014) 251.

  71. Gas sensors based on deposited single-walled carbon nanotubes-polypyrrole networks for ammonia detection
    Yanyan Wang, Yanhua Liu, Lei Yuan, Feng Zhang, Wei Zhang, Chen Rong, Dayun Huo, Xianying Zhang, Changsi Peng, Advanced Materials Research, 815 (2013) 501-507

  72. A Novel Method to Fabricate Hydrophobic Surfaces Based on CandleSoot Particles and Polydimethylsiloxane
    Lei YUAN, Feng ZHANG,    Wei-ping LIU,Xiao-yong GU,Wei ZHANG, Da-yun HUO, Xian-ying ZHANG, Yan-yan WANG and Chang-si Peng, Advanced Materials Research Vol. 815 (2013) pp.610-615

  73. 多光束激光干涉光刻图样的研究
    Multi-beam laser interference lithography (Chinese)
    W. Zhang, W. Liu, X. Gu, C. Tan, C.S. Peng,     强激光与粒子束(High Power Laser and Particles), 23(12) (2011) 3157.

  74. Focusing effect of a graded index photonic crystal lens
    C. Tan, Tapio Niemi, Changsi Peng, Markus Pessa, Optics Communications, 284 (2011) 3140–3143

  75. Ordered nanostructures written directly by laser interference
    C. Tan, C.S. Peng, J. Pakarinen, M. Pessa, V.N. Petryakov, Y.K. Verevkin, J. Zhang, Z. Wang, S.M. Olaizola, T. Berthou, S. Tisserand, Nanotechnology 20 (12), pp. 125303-1-5 (2009), Highlighted by IOP NanoTech Web (    http://nanotechweb.org/cws/article/tech/38274) on March 19, 2009, and website of US project InterNano (http://www.internano.org/content/view/184/158/) (University of Massachusetts Amherst) on March 20, 2009

  76. Annealing of self-assembled InAs/GaAs quantum dots: a stabilizing effect of beryllium doping
    J. Pakarinen, V. Polojärvi, A. Aho, P. Laukkanen, C.S. Peng, A. Schramm, A. Tukiainen, M. Pessa, App. Phys. Lett. 94, pp. 072105-1-3 (2009)

  77. An effect of As flux on GaAs/AlAs quantum wells: A combined photoluminescence and reflection high-energy electron diffraction study
     J. Pakarinen, V. Polojärvi, P. Laukkanen, A. Tukiainen, A. Laakso, C.S. Peng, P. Tuomisto, V-M. Korpijärvi, J. Puustinen, M. Pessa, Appl. Surface Sci.     255(5), pp2985-2988 (2008)

  78. Suppression of annealing-induced In diffusion in Be-doped GaInAsN/GaAs quantum well
     J. Pakarinen, C.S. Peng, A. Tukiainen, V.-M. Korpijärvi, J. Puustinen, M. Pessa, P. Laukkanen, J. Likonen, E. Arola, Appl. Phys. Lett. 93, 052102-1-3 (2008)

  79. Postgrowth annealing of GaInAs/GaAs and GaInAsN/GaAs quantum well samples placed in a proximity GaAs box: A simple method to improve the crystalline quality
    J. Pakarinen, C.S. Peng, J. Puustinen, P. Laukkanen, V.-M. Korpijärvi, A. Tukiainen, M. Pessa, Appl. Phys. Lett. 92, 232105-1-3 (2008)

  80. Line defects in two dimensional four-beam interference patterns
    C. Tan, C.S. Peng, V. N. Petryakov, Yu. K. Verevkin, J. Zhang, Z. Wang, S. M. Olaizola, T. Berthou, S. Tisserand and M. Pessa, New Journal of Physics 10 (2), pp.023023-1-8 (2008)

  81. Influence of Nitride and Oxide cap layers upon the annealing of 1.3-um GaInNAs / GaAs quantum wells
    H.F. Liu, C.S. Peng, J. Likonen, T.Jouhti, S. Karirinne, J. Konttinen, M. Pessa, J. Appl. Phys. 95 (8), pp. 4102-4104 (2004)

  82. In-situ annealing effect on the structural properties of near-surface GaInNAs/GaAs quantum wells
    H.F. Liu, S, Karirinne, C.S. Peng, T. Jouhti, J. Konttinen, M. Pessa, J. Gryst Growth 263, pp. 171-175 (2004)

  83. Annealing effects on optical and structural properties of 1.3-um GaInNAs/GaAs quantum-well samples capped with dielectric layers
    H.F. Liu, C.S. Peng, E.-M. Pavelescu, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa, Appl. Phys. Lett. 84, (4), pp. 478-480 (2004)

  84. Dilute nitride vertical-cavity surface-emitting lasers
    T. Jouhti, O.G. Okhotnikov, J. Konttinen, L.A. Gomes, C.S. Peng, S. Karirinne, E.-M. Pavelescu, M. Pessa, New Journal of Physics 5, pp. 84-1-6 (2003)

  85. Structural and optical properties of near-surface GaInNAs / GaAs quantum wells at emission wavelength of 1.3 µm
    H.F. Liu, C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, M. Valden M. Pessa, Appl. Phys. Lett. 82 (15) pp.2428-2430 (2003)

  86. Enhanced optical and structural properties of strain-compensated 1.3-um GaInNAs / GaNAs / GaAs quantum- well structures by insertion of strain-mediating layer
     E.-M. Pavelescu,     C.S. Peng, T. Jouhti, J. Konttinen, M. Dumitrescu, W. Li, M. Pessa, Solid State Electronics47/3 pp.507-512(2003)

  87. Strain-Compensated GaInNAs Structures for 1.3 um Lasers
     T. Jouhti,     C.S. Peng, E.-M. Pavelescu, J. Konttinen, L.A. Gomes, O.G. Okhotnikov, M. Pessa, IEEE J. of Selected Topics in Quantum Electronics, 8 (4), pp. 787-794, (2002)

  88. Enhanced optical performances of strain-compensated 1.3 um GaInNAs/GaNAs/GaAs quantum-well structures
     E.-M. Pavelescu, T. Jouhti,     C.S. Peng, W. Li, J. Konttinen, M. Dumitrescu, P. Laukkanen, M.Pessa, J. Cryst. Growth 241, pp. 31-38 (2002)

  89. Effects of insertion of strain-mediating layers on luminescence properties of 1.3-um GaInNAs / GaNAs / GaAs quantum-well structures
     E.-M. Pavelescu,     C.S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Dumitrescu, S. Spânulescu, M.Pessa, Appl. Phys. Lett. 80 (17) pp. 3054-3056 (2002)

     

    As a co-author（共同作者）:

  90. Working characteristics of external distributed feedback polymer lasers with varying waveguiding structures
    Wenbin Huang, Su Shen, Donglin Pu, Guojun Wei, Yan Ye, Changsi Peng, Linsen Chen, Journal of Physics D: Applied Physics, 48 (49) pp.495105 (2015.11.18).

  91. Polarized GaN-based light-emitting diode with an embedded metallic/dielectric subwavelength grating
     Guiju Zhang, Bing Cao, Chinhua Wang, Qin Han, Changsi Peng, Jianfeng Wang, Ke Xu, Hui Yang, Markus Pessa,     Thin Solid Films, 520 (2011) 419-423

  92. Sub-20 nm island self-organisation stimulated by spatially periodic laser exposure in the GaAs/InGaAs/GaAs epitaxial system
    Verevkin, Yu.K., Petryakov, V.N., Gushchina, Yu.Yu., Peng, C.S., Tan, C., Pessa, M., Wang, Z., Berthou T., Tisserand, S., Quantum Electronics, 40(1), pp.73-76 (2010)

  93. High-power laser interference lithography process on photoresist: effect of fluence and polarization
    M Ellan, A Rodriguez, N Perez, M Echeverria, YK Verevkin, CS Peng, T Berthou, Z Wang, SM Olaizola, I Ayerdi, Applied Surface Science, 255 (10), pp.5537-5541 (2009.3.1).

  94. Beryllium doping of GaAs and GaAnN studied from first principles
     H.-P. Komsa, E. Arola, J. Pakarinen, C.S. Peng, T. Rantala, Phys. Rev. B 79, 115208-1-9 (2009)

  95. Laser Interference Lithography for nanoscale structuring of materials: from laboratory to industry
    A. Rodriguez, M. Echeverria, M. Ellman, I. Ayerdi, J. Savall, Y.K. Verekin, C.S. Peng, T. Berthou, Z. Wang, S.M. Olaizola, Microelectronics Engineering, 86(4-6), pp937-940 (2009)

  96. High-power laser interference lithography process on photoresist: effect of laser fluence and polarization
    M. Ellman, A. Rodriquez, N. Perez, M. Echeverria, Y.K. Verevkin, C.S. Peng, T. Berthou, Z. Wang, S.M. Olaizola, I. Ayerdi, Appl. Surface Sci. 255(10), pp.5537-5541 (2008)

  97. Electronic and structural properties of GaAs(100)(2x4) and InAs(100)(2x4) surfaces studied by core-level photoemission and scanning tunneling microscopy
    P. Laukkanen, M. Kuzmin, R.E. Perälä, M. Ahola, S. Mattila, I. J. Väyrynen, J. Sadowski, J. Konttinen, T. Jouhti, C.S. Peng, M. Saarinen, M. Pessa, Phys. Rev. B 72, pp.045321-1-9 (2005)

  98. Long-wavelength Nitride Lasers on GaAs
    M. Pessa, C.S. Peng, T. Jouhti, E.-M. Pavelescu, W. Li, S. Karirinne, H.F. Liu, O.G. Okhotnikov, Microelectronics Engineering 69, pp. 195-207 (2003)

  99. Effects of hydrostatic pressure on Raman scattering in Ge quantum dot superlattices
    L. Qin, Z.X. Shen, K.L. Teo, C.S. Peng, J.M. Zhou, C.H. Tung, S.H. Tang, Thin Solid Films 424 (1), pp. 23-27 (2003)

  100. Crosshatching on a SiGe film grown on a Si(001) substrate studied by Raman mapping and atomic force microscopy
    H. Chen, Y. K. Li, C.S. Peng, H. F. Liu, Y. L. Liu, Q. Huang, and J. M. Zhou, Phys. Rev. B 65 (23) pp. 233303-1-4 (2002)

  101. Si上Ge薄膜特性研究
     Study on the properties of Ge film on Si (Chinese)
    李科，杨茹，李国辉，彭长四，李永康，北京师范大学学报: 自然科学版，K. Li, R. Yang, G. Li, C.S. Peng, Y. Li, Journal of Beijing Normal University: Natural Science Edition, 38(2) pp.211-213 (2002)

  102. Low-thereshold-current 1.32-um GaInNAs/GaAs single-quantum-well lasers grown by molecular-beam epitaxy
     W. Li, T. Jouhti,     C.S. Peng, J. Konttinen, P. Laukkanen, E.-M. PAvelescu, M. Dumitrescu, M. Pessa, Appl. Phys. Lett. 79 (21) pp. 3386-3388 (2001)

  103. Raman scattering of Ge/Si dot superlattices under hydrostatic pressure
    L. Qin, K. L. Teo, Z. X. Shen, C.S. Peng, and J. M. Zhou, Phys. Rev. B 64 (7) pp. 075312-1-4 (2001)

  104. Evolution of mosaic structure in Si0.7Ge0.3 epilayers grown on Si(001) substrates
    J. H. Li, C.S. Peng, Z. H. Mai, J. M. Zhou, Q. Huang, and D. Y. Dai J. Appl. Phys. 86 (3) pp. 1292-1297 (1999)

  105. Confinement and Electron-Phonon Interactions of the E1 Exciton in Self-organized Ge Quantum Dots
     S.H.Kwok, P.Y.Yu, C.S. Peng, J.M.Zhou, C.H.Tung, Y.H.Zhang Phys. Rev. B 59 (7) pp. 4980-4984 (1999)

  106. Critical Ge concentration for 2xn reconstruction appearing on GeSi covered Si(001)
     L.W.Guo, Q.Huang, Y.K.Li, S.L.Ma,     C.S. Peng and J.M.Zhou, Surf. Sci. 406 pp. L592-L596 (1998)

  107. Relaxed Si0.7Ge0.3 layers grown on low-temperature Si buffer with low threading dislocation density
     J.H.Li,     C.S. Peng, Y.Wu, D.Y.Dai, J.M.Zhou, Z.H.Mai, Appl. Phys. Lett. 71 pp. 3132-3134 (1997)

  108. Investigation of annealing and ion implantation in GeSi/Si superlattice
    JF Xiao, SL Feng, CS Peng, Journal of Infrared and Millimeter Waves 16 (5), 321-324 (1997)

  109. GeSi/Si 应变结构内应力纵向分布
     Longitudinal strain profile in GeSi/Si superlattice     (Chinese)
    肖剑飞，封松林，彭长四，红外与毫米波学报/ J. Xiao, S. Feng, C.S. Peng, Journal of Infrared and Millimeter Waves, 16 (5), 325-329 (1997)

  110. Second-harmonic generation from (Si5Ge5)100 superlattices with on applied external electric field
     X.H. Zhang, Z.H.Chen, L.Z.Xuan,     C.S. Peng, J.M.Zhou, S.H.Pan, G.Z.Yang, Appl. Phys. Lett. 71 pp. 3357-3359 (1997)

  111. Conversion of Step Configuration Induced by Strain in Si1-xGex Layer Deposited on Vicinal Si(001) Surface
     J.M.Zhou, L.W.Guo, Q.Cui,     C.S. Peng, and Q.Huang, Appl. Phys. Lett. 68 pp.628-630 (1996)

     

    Conference（学术会议）:

    Invited talks（特邀报告）:

  112. 激光干涉诱导分子束外延量子结构阵列的制备
    彭长四，2019第二届光电材料与器件战略论坛，昆明，2019年11月22-24日。

  113. Laser interference patterned growth of quantum structure arrays by molecular beam epitaxy
     Changsi Peng, 2019 Global Summit on Material Science &Engineering, Nov. 14-15, 2019, Osaka, Japan.

  114. 激光干涉诱导纳米结构阵列生长和刻蚀
    彭长四，石震武，杨琳韵，杨新宁，缪力力，庄思怡，第十三届全国分子术外延学术会议，烟台，2019年8月14-17日。

  115. Defect-free epitaxial quantum structure arrays
    Changsi Peng, The 17th IEEE International Conference on IC Design and Technology (ICICDT 2019), June 17-19, Suzhou, China.

  116. Laser interference modulated MBE growth of defect-free site-controlled quantum dot arrays
    Changsi Peng, Zhenwu Shi, Linyun Yang, Xinning Yang, Lili Miu, Siyi Zhuang,     《Nature》Conference: Emergent Materials and Devices, April 12-14, 2019, Chengdu, China.

  117. 原位激光干涉图形化自组装：一种量子结构阵列的新的制备
    彭长四，2018光电材料与器件战略论坛，广州，2018年11月23-25日。

  118. In-situ laser interference modulated MBE growth of site-controlled quantum dots
    Changsi Peng, Zhenwu Shi, Wei Zhang, Dayun Huo, Changwei Deng, Chen Chen, Linyun Yang, Lili Miu, and Xinning Yang, 20th International Conference on Molecular Beam Epitaxy (ICMBE 2018), September 2-7, 2018, Shanghai, China.

  119. High resolution nano-lithography
    C.S. Peng,     Nanotech Suzhou 2008, November7-8, 2008, Suzhou, China.

  120. Photonics studies on dilute nitrides at long wavelength for telecommunication
    C.S. Peng and M. Pessa
    Asia-Pacific Optical Communication 2007, November 1-5, 2007, Wuhan, China.
    Proc. SPIE 6782, 67821M1-12 (2007).

     

    As a 1st author（第一作者）:

  121. Fast, high efficiency and cost-effective laser nano-lithography
    C.S. Peng,    C. Tan, Proc. SPIE 7657, 7657-108 (2010), 5th SPIE International Symposium on Advanced Optical Manufacturing and Testing Technologies (AOMATT 2010), 26-29 April 2010,Dalian, China.

  122. High resolution nano-patterns
    C.S. Peng,     C. Tan, V. N. Petryakov, Yu. K. Verevkin, Z. Wang, S. M. Olaizola, T. Berthou, and M. Pessa, IVC-17/ICSS-13 and ICN+T2007 Congress, 2-6 July, 2007, Stockholm, Sweden, NSP3-87: NS - Nanotechnology & Fabrication, 4 July, 2007

  123. High-gain new InGaAsN heterostructure
    C.S. Peng,     J. Konttinen, T. Jouhti, and M. Pessa
    Photonics Europe 2006, Strasbourg, France April 3-6, 2006.
    Proc. SPIE 6184, 618409 (2006)

  124. High-gain InGaAsN materials
    C.S. Peng,     J. Konttinen, T. Jouhti, and M. Pessa
    Asia-Pacific Optical Communication 2005, Shanghai, China, Nov. 6-10, 2005.
    Proc. SPIE 6020, 60200H (2005)

  125. High performance GaAs-based InGaAsN and InGaAs Lasers
    C.S. Peng, T. Jouhti, J. Konttinen, and M. Pessa,     13th European MBE Workshop, Grindelwald, Swtzerland, March 7-9, 2005

  126. InGaAsN/GaAs lasers: high performance and long lifetime
    C.S. Peng,     J. Konttinen, T. Jouhti, and M. Pessa
    Photonics West 2005,     Novel In-Plane Semiconductor Lasers IV, San Jose, USA, Jan. 22-27, 2005,
    Proc. SPIE Int. Soc. Opt. Eng. 5738, 204 (2005)

  127. Single Mode GaInNAs/GaAs Lasers
    C.S. Peng, J. Konttinen, T. Jouhti, M. Pessa, European Semiconductor Laser Workshop 2004, Särö, Sweden, Sep. 2-4, 2004

  128. Mechanism of Photoluminescence Blue Shift in InGaAsN/GaAs Quantum Wells during Annealing
    C.S. Peng, H.F. Liu, J. Konttinen, M. Pessa, MBE 2004 Conf., Edinburgh, UK, Sep. 22-27, 2004.

  129. High Performance GaInNAs/GaAs Lasers
    C.S. Peng, J. Konttinen, T. Jouhti, M. Pessa, MBE 2004 Conf., Edinburgh, UK, Sep. 22-27, 2004.

  130. Low Threshold, High Power and Long Life Time GaInNAs/GaAs Lasers
    C.S. Peng, N. Laine, J. Konttinen, T. Jouhti, M. Pessa, EMRS 2004 Conf., Strasbourg, France, May 24-28, 2004, IEE Proc., Optoelectron. 151, pp. 426-428 (2004)

  131. N2-Incorporation-Induced Blue Shift in InGaAsN/GaAs Quantum Well during Annealing
    C.S. Peng, H.F. Liu, J. Konttinen, M. Pessa, EMRS 2004 Conf., Strasbourg, France, May 24-28, 2004, IEE Proc., Optoelectron. 151, pp. 320-322 (2004)

  132. Blue Shift in InGaAsN/GaAs Quantum Wells with Different Width
    C.S. Peng, J. Konttinen, H.F. Liu, M. Pessa, EMRS 2004 Conf., Strasbourg, France, May 24-28, 2004, IEE Proc., Optoelectron. 151, pp. 317-319 (2004)

  133. Thermal annealing effect on InGaAsN/GaAs lasers
    Changsi Peng,     Janne Konttinen, Suvi Karirinne, Tomi Jouhti, Hongfei Liu, and Markus Pessa
    Photonics West 2004, San Jose, USA, 26-29 January, 2004. Proc. SPIE Int. Soc. Opt. Eng. 5365, pp. 40-45 (2004).

  134. InGaAsN/GaAs lasers performance on thermal annealing
    C.S. Peng, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa, 20th Nordic Semiconductor Meeting, Tampere, Finland, 25-27 August, 2003

  135. Thermal annealing effect on InGaAsN/GaAs lasers
    C.S. Peng, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa, International Workshop on GaAs based lasers for the 1.3 - 1.5 µm wavelength range (Wroclaw, Poland, 24-26 April 2003)

  136. Reveal the Surface Defect Pits of AlGaAs Related Epitaxial Layer by Wet Oxidation
    C.S. Peng, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa, E-MRS 2003 Meeting, Strasbourg, France, 10-13 June, 2003.

  137. Thermal annealing effect on InGaAsN/GaAs lasers
    C.S. Peng, T. Jouhti, S. Karirinne, J. Konttinen, M. Pessa, Physics Days 2003, The XXXVII Annual Conf. of the Finnish Phys. Soc., 1.3, 78.55, p. 12, Helsinki Finland, 20-22 March, 2003

  138. Interdiffusion of GaInNAs/GaAs laser structures
    C.S. Peng, H.F. Liu, T. Jouhti, E.-M. Pavelescu, J. Konttinen, M. Pessa, International Workshop on Physics and Technology of Dilute Nitrides for Optical Communications, Istanbul, Turkey, 8-12 Sept., 2002. IEE Proc. Optoelectronics, 150 (1) pp.36-39 (2003)

  139. In-Plan Self-Organized Two-Dimensional-Ordered GeSi Islands Grown on Si (001) by Molecular Beam Epitaxy
    C.S. Peng, Y.K. Li, and J.M. Zhou, MBE XII Conf., San Fransisco, USA, Sep. 2002. Conf. proc. IEEE Catalog #02EX607, paper number MB2.6, pp. 55-56 (2002)

  140. A study and control of lattice sites of N and Ga / In / N interdiffusion in dilute nitride quantum wells
    C.S. Peng, W. Li, T.Jouhti, E.-M. Pavelescu, M. Pessa, MBE XII Conf., San Fransisco, USA, Sep. 2002. Conf. proc. IEEE Catalog #02EX607, paper number ThA1.2, pp. 267-268 (2002)

  141. Reveal the Threading Dislocation Pits of AlGaAs Related Epitaxial Layer by Wet Oxidation
    C.S. Peng, T. Jouhti, J. Konttinen, M. Pessa, MBE XII Conf., San Fransisco, USA, Sep. 2002. Conf. proc. IEEE Catalog #02EX607, paper #TuP 28, pp. 179-180 (2002)

  142. 1.3 um InGaAsN/GaAs Edge Emitting and Vertical Cavity Surface Emitting Lasers grown by molecular beam epitaxy
    C.S. Peng, T. Jouhti, J. Konttinen, W. Li, M. Pessa, MBE XII Conf., San Fransisco, USA, Sep. 2002. Conf. proc. IEEE Catalog Number 02EX607, paper TuA1.3, pp. 63-64 (2002)

  143. A new method to suppress the In diffusion of GaInNAs/GaAs quantum wells grown by molecular beam epitaxy
    C.S. Peng, E.-M. Pavelescu, T. Jouhti, J. Konttinen, W. Li, M. Pessa, E-MRS 2002 Spring Meeting, Strasbourg, France, Jun. 2002

  144. Study of Ge0.96Si0.04 epilayers grown on Si (001)at high temperature
    C.S. Peng, H.Kawanami, Y.K.Li, G.H.Li, Q.Huang, and J.M.Zhou,11th Intern. Conf. MBE, Sep. 2000 China

  145. The formation of dislocations in the interface of GeSi/low-temperature Si buffer grown on Si (001)
    C.S. Peng, Y.K.Li, Q.Huang, and J.M.Zhou11th Intern. Conf. MBE, Sep. 2000 China

  146. The mechanism of the relaxation of GeSi on low-temperature Si
    C.S. Peng, Q.Huang, J.M.Zhou, 5th National MBE Conf., Jun. 1999 China

  147. Relaxed GeSi alloy grown on low-temperature buffers by MBE
    C.S. Peng, Q.Huang, J.M.Zhou, Y.H.Zhang, C.H.Tung, T.T.Sheng, J.Wang, SPIE’s Photonics West’99, Jan. 1999 USA, Proceedings-of-the-SPIE --The-International-Society-for-Optical-Engineering. vol.3630, 1999, p.231-6

  148. The strain relaxation of GeSi grown on low-temperature Si
     C.S. Peng    , H.Chen, Z.Y.Zhao, J.H.Li, D.Y.Dai, Q.Huang, J.M.Zhou, Y.H.Zhang, T.T.Sheng, C.H.Tung, 5th China-Japan Symp. on Thin Film, pp60, Nov. 1998 China

  149. The strain relaxation of GeSi alloy with low dislocation density grown on low-temperature Si buffers
     C.S. Peng    , Q.Huang, J.M.Zhou, Y.H.Zhang, C.H.Tung, T.T.Sheng, J.Wang, 10th Intern. Conf. MBE, Sep. 1998 France

  150. The Behavior of Sb-dopant in Silicon
    C.S. Peng, L.W.Guo, Q.Huang, J.M.Zhou, 4th National MBE Conf. pp76, Sep. 1997 China

  151. Novel Ge self-organized quantum dots in Si
     C.S. Peng    , Q.Huang, Y.H.Zhang, W.Q.Cheng, T.T.Sheng, C.H.Tung, J.M.Zhou, 8th Intern. Conf. Narrow-gap Semicond. pp440, Apr. 1997    , China, Proceedings of the Eighth International Conference on Narrow Gap Semiconductors, World Scientific, Singapore, 1998, xix+472 pp. 440-5

     

    As a supervisor of the research（导师指导）:

  152. Superhydrophobic Surface Modified by Sol-gel Silica Nanoparticle coating
    Xiaoxing Zhang, Yanyan Wang, Liang Gu, Zhiyong Xu, Yanhua Liu, Changsi Peng, the 8th Spring World Congress on Engineering and Technology (SCET 2019), Xiamen, China, 22-24 April , 2019. Materials Science Forum, 2019, 960: 155-160.

  153. Novel tubular graphene synthesized via chemical vapor deposition Process
     Ming Yang, Yanyan Wang, Lei Dong, Zhekun Wu, Yanhua Liu and Changsi Peng, 2019 3rd International Conference on Material Engineering and Advanced Manufacturing Technology (MEAMT 2019), Shanghai, China, 26-28 April, 2019.

  154. Sensing Properties of 3D Graphene Nanotubes (GNT)@ZnO at Room Temperature
     Lei Dong, Yanyan Wang*, Zhekun Wu, Weixiao Liu, Shuyang Ying, Manman Huang, Changsi Peng, 2019 5th International Conference on Advances in Energy Resources and Environment Engineering (ICAESEE2019), Chongqing, China, 06-08 December, 2019.

  155. Preparation of copper nanowires conductive films by using cuprous oxide nanowire as template
     Weixiao Liu, Yanyan Wang, Lei Dong, Manman Huang, Shuyang Ying, Changsi Peng, 2019 5th International Conference on Advances in Energy Resources and Environment Engineering (ICAESEE2019), Chongqing, China, 06-08 December, 2019.

  156. Realization of periodic InAs QDs by in-situ four-beam laser-interference irradiation on the wetting layer
     L Yang, X Yang, L Miao, W Zhang, D Huo, Z Shi, Changsi Peng, Proc. SPIE 10814, Optoelectronic Devices and Integration VII, 108141M (5 November 2018); doi:10.1117/12.2513815.

  157. Surface modification on InAs wetting layer by in-situ pulsed laser and the effects on quantum dot growth
    Chen Chen, Linyun Yang, Changwei Deng, Xinning Yang, Lili Miao, Zhenwu Shi, Changsi Peng, Sixth International Conference on Optical and Photonic Engineering (icOPEN 2018), 10827, pp.108272A (2018.7.24).

  158. Construction of superhydrophobic surfaces by sol-gel techniques
    Gu L, Wang Y, Xu C, Zhang F, Wu Z, Zhang X, Shi Z, Peng C.S., Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), IEEE, 2017:156-160.

  159. Surface modification on GaAs by in-situ pulsed UV laser
    Xiaoxiang Guo, Dayun Huo, Wei Zhang, Chao Xu, Changwei Deng, Changsi Peng, 8th International Symposium on Advanced Optical Manufacturing and Testing Technologies: Optoelectronic Materials and Devices, 9686, pp.96860P (2016.10.25)

  160. Fabrication of superhydrophobic soot-like surface
    Xu C, Shi Z, Wu Z, Zhang F, Gu L, Wang Y, Zhou X, Peng C.S., Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), IEEE, 2016: 400-403.

  161. Rose petal mimic surface by TiO2 sol-gel process
    Wu Z, Shi Z, Xu C, Zhang F, Gu L, Wang Y, Zhou X, Peng C.S., Manipulation, Manufacturing and Measurement on the Nanoscale (3M-NANO), IEEE, 2016: 221-224

  162. Surface modification on GaAs by in-situ pulsed UV laser
    Xiaoxiang GUO, Dayun HUO, Wei ZHANG, Chao XU, Changwei Deng, Changsi Peng, Proc. of SPIE Vol. 9686, 96860P, AOMATT 2016: Optoelectronic Materials and Devices, 26-29, April, 2016, Suzhou, China

  163. Superhydrophobic surface transferred from Berberis thunbergii leaf using one step replication
    Feng Zhang*, Yingjie Jiang, Zhuhui Wu, Jiajia Song, Chengyun Xu, Zhenwu Shi, Changsi Peng, 5th3M-NANO (International Conference on Manipulation, Manu­facturing and Measurement on the Nanoscale) 5-9 October 2015, Changchun, China

  164. Direct metal transfer printing on flexible substrate for fabricating optics functional devices
    Yingjie JIANG, Xiaohong ZHOU*, Feng ZHANG, Zhenwu SHI, Linsen CHEN, Changsi Peng, International Workshop on Thin-films for Electronics,Electro-Optics,Energy and Sensors 2015, 4-6 July, 2015, Suzhou, China, Proc. SPIE 9667 (ISSN:0277-786X), 966707 (November 6, 2015), doi:10.1117/12.2199655, http://dx.doi.org/10.1117/12.2199655, (2015) 9667-23

  165. Fabrication of super-hydrophobic duo-structures
    X. Y. Zhang, F. Zhang, Y. J. Jiang, Y. Y. Wang, Z. W. Shi, C.S. Peng, Proc. of SPIE Vol. 9522 pp.952233-1, Selected Papers from Conferences of the Photoelectronic Technology Committee of the Chinese Society of Astronautics 2014, Part II, 952233 (April 13, 2015), doi:10.1117/12.2184406.

  166. Fabrication of micro- and nano- structures for antireflection by chemical etching method
    C. Rong, X.-Y. Gu, W.-P. Liu, W. Zhang, F. Zhang, L. Yuan, Y.Y. Wang and C.S. Peng,Proc. IEEE 978-1-4799-1213-1/13 (2013), pp.368-371. 3M-NANO (International Conference on Manipulation, Manu­facturing and Measurement on the Nanoscale) 26-30 August 2013, Suzhou, China, DOI: 10.1109/3M-NANO.2013.6737452.

  167. Superhydrophobic micro-nano structures transferred from Berberis Thunbergii leaves
    F. Zhang, X.Y. Zhang, L. Yuan, W.Zhang, D.Y. Huo,Y.Y. Wang, C.S. Peng, Proc. IEEE 978-1-4799-1213-1/13 (2013), pp.60-63.3M-NANO (International Conference on Manipulation, Manu­facturing and Measurement on the Nanoscale) 26-30 August 2013, Suzhou, China, DOI: 10.1109/3M-NANO.2013.6737380.

  168. Hydrophobic surface fabricated by laser interference lithography
    W. P. Liu, X. Y. Gu, W. Zhang, F. Zhang, L. Yuan, Y.Y. Wang and C.S. Peng, Proc. IEEE CFP123MN-CDR pp.411-415 (2012). 3M-NANO (International Conference on Manipulation, Manu­facturing and Measurement on the Nanoscale) 2012, Xi’an, China, Aug.29-Sep.01, DOI: 10.1109/3M-NANO.2012.6472964.

  169. Periodic Sub-wavelength Surface-relief Structures for Anti-reflection
    X.-Y. Gu, W.-P. Liu    , W. Zhang, F. Zhang, L. Yuan, Y.Y. Wang and C.S. Peng, Proc. IEEE CFP123MN-CDR pp.351-354 (2012).3M-NANO (International Conference on Manipulation, Manu­facturing and Measurement on the Nanoscale) 2012, Xi’an, China, Aug.29-Sep.01, DOI: 10.1109/3M-NANO.2012.6472953.

  170. Fabricate planar photonic crystal gradient index lens by laser interference lithography
     C. Tan, C.S. Peng, V.N. Petryakov, Yu. K. Verevkin, J. Zhang, Z. Wang, S.M. Olaizola, T. Berthou, S. Tisserand    , IEEE Nano 2009, Genoa, Italy, 26 - 30 July, 2009, Proceeding of IEEE Nanotechnology, pp.450-453 (2009)

  171. The effect of annealing on highly be-doped INGAASN/GAAS single quantum wells
    J. Pakarinen, C.S. Peng, V. Polojärvi, P. Laukkanen, A. Tukiainen, V.-M. Korpijärvi, J. Puustinen, M. Pessa, Physics Days 2008, Turku, Finland, 27 - 28 March, 2008, Proceedings of the XLII Annual Conference of the Finnish Physical Society, p. 112, ISBN 978-951-29-3515-4

  172. The effect of annealing on highly be-doped INGAASN/GAAS single quantum wells
    J. Pakarinen, C.S. Peng, V. Polojärvi, P. Laukkanen, A. Tukiainen, V.-M. Korpijärvi, J. Puustinen, M. Pessa, Physics Days 2008, Turku, Finland, March 27 - 29, 2008

  173. Line defects induced by asymmetric four-beam interference
    C. Tan, C.S. Peng, V. N. Petryakov, Yu. K. Verevkin, J. Zhang, Z. Wang, S. M. Olaizola, T. Berthou, S. Tisserand and M. Pessa, Russian-Finnish Scientific Conference, 12.-13.9.2007, Helsinki

  174. Thermal annealing effect on 1.3 um GaInNAs/GaAs quantum well structures capped with dielectric films
    H.F. Liu, C.S. Peng, S. Karirinne, J. Konttinen, T. Jouhti, M. Pessa, EMRS 2004 Conf., Strasbourg, France, May 24-28, 2004, IEE Proc., Optoelectron. 151, pp. 267-270 (2004)

  175. 1.28 um GaInNAs VCSELs
    T. Jouhti, O.G. Okhotnikov, J. Konttinen, L.A. Gomes, S. Karirinne, C.S. Peng, E.-M. Pavelescu, M. Pessa, International Workshop on GaAs based lasers for the 1.3 - 1.5 µm wavelength range (Wroclaw, Poland, 24-26 April 2003).

  176. Diluted Nitride Edge-emitting and Vertical-Cavity Lasers for 1.3-um Fibre-Optic Networks
     T. Jouhti,     C.S. Peng, E.-M. Pavelescu, J. Konttinen, L.A. Gomes, O.G. Okhotnikov, M. Pessa, ICTON 2002, 4th Intern. Conf. on Transparent Optical Networks, Warsaw, Poland, Apr. 2002. IEEE conf. proc. 1, pp. 140-143 (2002)

  177. Photoluminescence study of strain-compensated GaInNAs/GaNAs/GaAs quantum-well structures grown by molecular-beam epitaxy
     E.-M. Pavelescu, T. Jouhti, M. Dumitrescu, C.S. Peng, W. Li, J. Konttinen, V. Cimpoca, M. Pessa, CAS 2002, Int. Semiconductor Conf., Sinaia, Romania, Oct. 2002. Conf. proc., IEEE Catalog #02TH8618, 1 pp. 177-180 (2002)

  178. Diluted Nitride Quantum Well Structures and Lasers for 1.3-um Fiber-optic Networks
     T. Jouhti, E.-M. Pavelescu,     C.S. Peng, L.A. Gomes, S. Karirinne, O.G. Okhotnikov, M. Pessa, LongWave on GaAs Conference, Napa Valley Marriott, USA, Jun. 2002

  179. Influence of low-temperature growth on photoluminescence of 1.3-um GaInNAs/GaNAs/GaAs quantum wells
     E.-M. Pavelescu, T. Jouhti,     C.S. Peng, M. Dumitrescu, W. Li, J. Konttinen, M. Pessa, International Workshop on Physics and Technology of Dilute Nitrides for Optical Communications, Istanbul, Turkey, Sept. 2002

  180. Microstructure Analysis and Optical Performance of MBE-grown GaInNAs/GaAs quantum wells
     T. Jouhti, S. Karirinne, J. Konttinen, E.-M. PAvelescu,     C.S. Peng, M. Pessa, International Workshop on Physics and Technology of Dilute Nitrides for Optical Communications, Istanbul, Turkey, Sept. 2002

  181. 1.55-um monolithic GaInNAs/GaAs semiconductor saturable absorber
     T. Jouhti, J. Konttinen, S. Karirinne, M. Guina,     C.S. Peng, O.G. Okhotnikov, M. Pessa, International Workshop on Physics and Technology of Dilute Nitrides for Optical Communications, Istanbul, Turkey, Sept. 2002

  182. Enhanced optical and structural properties of strain-compensated 1.3-um GaInNAs / GaNAs / GaAs quantum- well structures by insertion of strain-mediating layer
     E.-M. Pavelescu,     C.S. Peng, T. Jouhti, J. Konttinen, M. Dumitrescu, W. Li, M. Pessa, E-MRS 2002 Spring Meeting, Strasbourg, France, Jun. 2002.

  183. Novel GaAs-based nitride and antimonide long-wavelength VCSELs
     T. Jouhti,     C.S. Peng, E.-M. PAvelescu, J. Konttinen, L.A. Gomes, O.G. Okhotnikov, M. Pessa, Symposium and Summer School on: Nano and Giga Challenges in Microelectronics Research and Opportunities in Russia, Book of Abstracts, p. 192 (2002), Moscow, Russia, Sep. 2002

  184. Photoluminescence study of strain-compensated GaInNAs/GaAs/GaAs quantum-well structures grown by molecular-beam epitaxy
    E-M Pavelescu, T Jouhti, M Dumitrescu, CS Peng, W Li, J Kontinnen, V Cimpoca, A Pessa, Semiconductor Conference, 2002. CAS 2002 Proceedings. IEEE 1 pp.177-180 (2002)

  185. Diluted nitride edge-emitting and vertical-cavity lasers for 1.3um fibre-optic networks
    T Jouhti, CS Peng, E-M Pavelescu, J Konttinen, LA Gomes, O Okhotnikov, M Pessa, Transparent Optical Networks, 2002. Proceedings of the 2002 4th International Conference on Transparent Optical Networks, 1, pp.140-143 (2002)

  186. Group III-Arsenide-Nitride Quantum Well Structures on GaAs for Laser Diodes Emitting at 1.3 um
     T. Jouhti,     C.S. Peng, E.-M. Pavelescu, W. Li, V.-T. Rangel-Kuoppa, J. Konttinen, P. Laukkanen, M.Pessa, SPIE 4651, pp. 32-41, Photonics West 2002, San Jose, USA, Jan. 2002

  187. GaInAsN quantum well structures and lasers on GaAs grown by solid source MBE
     T. Jouhti, P. Laukkanen,     C.S. Peng, J. Konttinen, E.-M. Pavelescu, W. Li, M. Pessa, European Workshop on Gallium Arsenide - Based Lasers at 1300 nm, Lecce, Italy, Sep. 2001

     

    As a co-author（共同作者）:

  188. .Quality Inspection of Nanoscale Patterns Produced by Laser Interference Lithography Using Image Analysis Techniques
     Ze Ji, Jin Zhang, Santiago M Olaizola, Yury K Verevkin,     Changsi Peng, Chunlei Tan, Thierry Berthou, Stéphane Tisserand, Zuobin Wang    , International Conference on Mechatronics and Automation 2009, August 9 - 12, Changchun, China,IEEE Proc. ICMA, pp.1835 (2009)

  189. Interference lithography processes with high-power laser pulses
    A. Rodriguez, M. Ellman, I. Ayerdi, N. Perez, S. M. Olaizola, J. Zhang, Z. Ji, T. Berthou, C.S. Peng, Y. K. Verevkin, and Z. Wang
    Proc. SPIE 7201, 72010R     (Laser Applications in Microelectronic and Optoelectronic Manufacturing VII), (2009).

  190. Laser interference nanolithography
    Z. Wang, J. Zhang, Z. Ji, M. Packianather, Changsi Peng (C.S. Peng), C. Tan, Y.K. Verevkin, S.M. Olaizola, T. Berthou, S. Tisserand, ICMEN, International Conference of Manufacturing Engineering, 2008

  191. A High Power Laser Interference Lithography for nanoscale structuring of materials
    A. Rodriguez, M. Echeverria, M. Ellman, I. Ayerdi, J. Savall, Y.K. Verekin,     C.S. Peng, T. Berthou, Z. Wang, S.M. Olaizola, 34th International conference on Micro and Nano Engineering 2008, 15-18 September, Athens, Greece

  192. Application of the scissors-correction scheme to the calculation of the complex dielectric function for GaAs1-xNx Alloys with and without Be-Related defects
    E. Arola, H.-P. Komsa, T.T. Rantala, C.S. Peng, R. Ahorinta, J. Pakarinen, V. Polojärvi, M. Pessa, Physics Days 2008, Turku, Finland, 27 - 28 March, 2008, Proceedings of the XLII Annual Conference of the Finnish Physical Society, p. 240, ISBN 978-951-29-3515-4

  193. GaInNAs/GaAs Quantum-Well Semiconductor Optical Amplifiers for Simultaneous Multi-wavelength Amplification
    J. Pozo, N. Vogiatzis, J. W. Lu, O. Ansell, J. M. Rorison, P.J. Heard, P. Tuomisto, J. Konttinen, M. Saarinen, C.S. Peng, J. Viheriälä, T. Leinonen, M. Pessa, CLEO Europe 2007, Münich, Germany, 17-22 June, 2007

  194. Fabrication and characterization of GaInNAs/GaAs semiconductor optical amplifiers
    J. Pozo, N. Vogiatzis, O. Ansell, P. J. Heard, J. M. Rorison, P. Tuomisto, J. Konttinen, M. Saarinen,C. Peng, J. Viheriälä, T. Leinonen, and M. Pessa
    PHASE-2007, Metz, France, March 28-30, 2007. Optical and Quantum Electronic (2007)
    Proc. SPIE 6997, 69970C (Semiconductor Lasers and Laser Dynamics III) (2008)

  195. QDot and GaInNAs/GaAs Broadband Semiconductor Optical Amplifiers for Simultaneous Multiwavelength Amplification
    J M Rorison, J Pozo, N Vogiatzis, YN Qiu, P Tuomisto, J Konttinen, M Saarinen, C Peng, J Viheriala, T Leinonen, M Pessa, 9th International Conference on Transparent Optical Networks, 2007. ICTON'07.IEEE proceedings 2 pp52-53 (2007.7.1)

  196. Application of multiple-beam laser interference photolithography to the fabrication of nanometric structures
     Ainara RODRIGUEZ, Noemí PEREZ, Isabel AYERDI, Santiago M. OLAIZOLA,Yuri VEREVKIN, Vladimir N. PETRYAKOV, Eric Ya. DAUME, Thierry BERTHOU, Changsi Peng(C.S. Peng), Zuobin WANG, 5ª Reunión Española de Optoelectrónica, OPTOEL’07, 2007

  197. Technological potential of laser interference nanolithography
    Z Wang, J Zhang, M Packianather, C Peng, YK Verevkin, SM Olaizola, T Berthou, S Tisserand, Proc. International Workshop on Micro-and Nano Production Technologies and Systems, pp.34-37 (2007.10.17)

  198. System requirement analysis of laser interference nanolithography
    Zuobin Wang, Jin Zhang, Changsi Peng (C.S. Peng), Chunlei Tan, Isabel Ayerdi, Ainara Rodríguez, Yury K. Verevkin, Thierry Berthou,Stéphane Tisserand and Santiago M. Olaizola, International Conference on Mechatronics and Automation 2007, August 5 - 8, 2007, Harbin, China.Proc. IEEE 2007 ICMA, pp.434-439(2007)

  199. Current developments and applications using multi-beam laser interference lithography for nanoscale structuring of materials
    S. Z. Su, Ainhara Rodríguez, Santiago M. Olaizola, C.S. Peng, C. Tan, Yury K. Verevkin, Thierry Berthoud, and Stéphane Tisserand
    Proc. SPIE 6593, 65930G (2007)

  200. Formation of 4-beam laser interference patterns for nanolithography
    Jin Zhang, Zuobin Wang, Yury K. Verevkin, Santiago M. Olaizola, Changsi Peng, Chunlei Tan, Ainara Rodriguez, Eric Y. Daume, Thierry Berthou, Stéphane Tisserand, and Ze Ji
    Proc. SPIE 6593, 65930I (2007)

  201. GaInNAs/GaAs Quantum-Well Semiconductor Optical Amplifiers for Simultaneous Multi-wavelength Amplification
    J Pozo, N Vogiatzis, JW Lu, O Ansell, JM Rorison, PJ Heard, P Tuomisto, J Konttinen, M Saarinen, C Peng, J Viheriälä, T Leinonen, M Pessa, The European Conference on Lasers and Electro-Optics 2007, Optical Society of America, CB-2 (2007.6.17)

  202. Principios y Aplicaciones de la Fotolitografía por Interferencia Láser de Múltiple Haz (Spanish)
     A. Rodríguez, N. Pérez, I. Ayerdi, Y. Verevkin, V.N. Petryakov, E. Ya. Daume, T. Berthou, C.S. Peng, Z. Wang, S.M. Olaizola, Actas del III Taller Nacional – Procesado Materiales con Láser Noviembre 2006 - AIDO, Paterna (Valencia), 2006

  203. Cross-sectional scanning tunneling microscopy of GaAs-based semiconductor heterostructures
    K. Lahtonen, M. Hirsimäki, M. Valden, T. Hakkarainen, A. Tukiainen, T. Leinonen, L. Toikkanen, C.S. Peng, M. Pessa, NCSS-5 Conference, Tampere, Finland, Sept. 22-25, 2004

  204. Long-wavelength Nitride Lasers on GaAs
    M. Pessa, C.S. Peng, T. Jouhti, E.-M. Pavelescu, W. Li, S. Karirinne, H.F. Liu, O.G. Okhotnikov, special MEE volume by Elsevier, Moscow NGCM Meeting Proceedings (2003), Microelectron. Eng. 69, 195-207 (2003)

  205. Towards high-performance nitride lasers at 1.3 um and beyond
     M. Pessa,     C.S. Peng, T.Jouhti, E.-M. PAvelescu, W. Li, S. Karirinne, H. Liu, O.Okhotnikov, International Workshop on Physics and Technology of Dilute Nitrides for Optical Communications, Istanbul, Turkey, Sept. 2002. IEE Proc. Optoelectronics 150 (1), pp. 36-39 (2003)

  206. High performance 1.32 um GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
     W. Li,     C.S. Peng, T. Jouhti, J. Konttinen, E.-M. Pavelescu, M. Suominen, M. Dumitrescu, M. Pessa, SPIE 4651, pp. 101-106, Photonics West 2002, San Jose, USA, Jan. 2002, Proceedings-of-the-SPIE-The-International-Society-for-Optical-Engineering. 2002, 4651: 101-6

  207. High performance 1320 nm GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
     W. Li, T. Jouhti,     C.S. Peng, J. Konttinen, E.-M. Pavelescu, M. Dumitrescu, M. Pessa, IPRM 2002, 14th Int. Conf. on Indium Phosphide and Related Materials, Stockholm, Sweden, May 2002. Conf. Proc. IEEE Catalog Number: 02CH37307, pp. 23-26 (2002)

  208. High performance 1.32um GaInNAs/GaAs single-quantum-well lasers grown by molecular beam epitaxy
    Wei Li, J Konttinen, Chang Si Peng, T Jouhti, E-M Pavelescu, M Suominen, M Pessa, Indium Phosphide and Related Materials Conference, 2002. IPRM. 14th, IEEE 2002, pp.23-26

  209. The Growth of Relaxed GeSi Alloy Epilayers with Low Dislocation Density
    Z.Y.Zhao, C.S. Peng, C.H.Tung, T.T.Sheng, Q.Huang, J.M.Zhou, 4th National MBE Conf. pp83, Sep. 1997, China

  210. The Abnormal Optical Transition from Ge Self-organized Quantum Dots
    J.M.Zhou, C.S. Peng, Q.Huang, Y.H.Zhang, W.Q.Cheng, 4th National MBE Conf. pp18, Sep. 1997 China

  211. Conversion of Step Configuration Induced by Strain in Si1-xGex or Ge Layer Deposited on Vicinal Si(001) Surface
    J.M.Zhou, L.W.Guo, Q.Cui, C.S. Peng, Q.Huang, 4th China-Japan Symp. on Thin Film, pp 52, Oct. 1995China

Books&Patents

Books Writings：

see Publications.

 Patents Patent：

see Publications.

Honors

Honor Reward：

Supervision

Enrollment：