张冬利

发布时间：2024-09-14浏览次数：2268

  • 1、Investigations on the Gate-Induced Drain Leakage Current of Polycrystalline-Silicon Thin-Film Transistor and Its Suppression With Drain Bias Sweep, IEEE Transactions on Electron Devices, SCI, 2016.04,Dongli Zhang,Mingxiang Wang,Huaisheng Wang, vol. 63, no. 4, pp. 1572-7157.
  • 2、Enhanced Negative Bias Stress Degradation in Multigate Polycrystalline Silicon Thin-Film Transistors, IEEE Transactions on Electron Devices, SCI, 2017.10,Dongli Zhang,Mingxiang Wang,Huaisheng Wang,Yilin Yang, vol. 64, no. 10, pp. 4363-43637.
  • 3、Suppressed Degradation of Elevated-Metal Metal-Oxide Thin-Film Transistors under Bipolar Gate Pulse Stress, IEEE Electron Device Letters, SCI, 2018.05,Yilin Yang,Dongli Zhang(#),Mingxiang Wang,Huaisheng Wang, vol. 39, no. 5, pp. 707-710.
  • 4、Investigations on the Negative Shift of the Threshold Voltage of Polycrystalline Silicon Thin-Film Transistors Under Positive Gate Bias Stress, IEEE Transactions on Electron Devices, SCI, 2021.02,Nairi Liang,Dongli Zhang(#),Mingxiang Wang,Huaisheng Wang, vol. 68, no. 2, pp. 550-555.
  • 5、Enhanced Thermal Stability of Elevated-Metal Metal-Oxide Thin-Film Transistors via Low-Temperature Nitrogen Post-Annealing, IEEE Transactions on Electron Devices, SCI, 2021.03,Yiran Wei,Yining Yu,Nanan Lv,Dongli Zhang, vol. 68, no. 4, pp. 1649-1653.
  • 6、Hot-Carrier Effects in a-InGaZnO Thin-Film Transistors under Pulse Drain Bias Stress, IEEE Transactions on Electron Devices, SCI,2021.06,Tianyuan Song, Dongli Zhang(#),Mingxiang Wang, vol. 68, no. 6, pp. 2742-2747
  • 7、Degradation Mechanisms for a-InGaZnO Thin-Film Transistors Functioning under Simultaneous DC Gate and Drain Biases,Chinese Physics B,SCI,2022.08,Tianyuan Song,Dongli Zhang,Mingxiang Wang,Dongli Zhang,vol.31, no.8, Art. no. 088101