孙斌

发布时间：2026-01-23浏览次数：1836

  • 1、"Supervised learning for roughness reconstruction under different scanning modes using confocal laser scanning microscope", Applied Optics, 2026, Y. Zhu, Y. Zhu, B. Sun, Y. Zou*, vol. 65, p. 1920-1932, doi: 10.1364/AO.585887.
  • 2、"PN结仿真软件",软著,2026
  • 3、"基于Python语言的MOSFET器件仿真实验平台开发", 实验科学与技术, 2026, 孙斌，秦祯雷，毛力言，胡文元，王胜，王明湘*
  • 4、"Charge-Mediated Effects in Dual-Gate Reconfigurable Field-Effect Transistors", 2025 18th IEEE United Conference on Millimeter Waves and Terahertz Technologies (UCMMT), 2025, Z. Qin, B. Sun*, Nanjing, China, 2025, pp. 1-3, doi: 10.1109/UCMMT67044.2025.11287787.
  • 5、"Direct Growth and Integration of Silicon Nanowire Transistors on Polymer Substrates", ACS Appl. Mater. Interfaces, 2025, X. Song†, J. Fan†, B. Sun, Y. Gu, S. Wang*, J. An, D. Liu, J. Wang, and L. Yu*, 17, 48503−48510, doi: 10.1021/acsami.5c11278.
  • 6、"Scalable Integration of High Sensitivity Strain Sensors Based on Silicon Nanowire Spring Array Directly Grown on Flexible Polyimide Films", Nano Letters, 2025, X. Song, Y. Gu, S. Wang*, J. Fan, J. An, L. Yan, B. Sun, J. Wang, L. Yu*,25, 2290, doi: 10.1021/acs.nanolett.4c05553.
  • 7、"Lateral Electrochemical Metallization Cells for Reconfigurable Interconnect Systems", IEEE Journal of the Electron Devices Society, July 2023, T. Frahm*, M. Buttberg, G. Gvozdev, R. A. Müller, S. Chen, B. Sun, L. Raffauf, S. Menzel, I. Valov, D. Wouters, R. Waser, J. Knoch, vol. 11, pp. 432-437, doi: 10.1109/JEDS.2023.3297855.
  • 8、"Sub-Linear Current Voltage Characteristics of Schottky-Barrier Field-Effect Transistors", IEEE Transactions on Electron Devices, May 2022, Joachim Knoch*, Bin Sun, vol. 69, no. 5, pp. 2243-2247, doi: 10.1109/TED.2022.3161245.
  • 9、"Modeling and Prediction of Hydrogen-Assisted Morphological Evolution in Silicon Utilizing a Level-Set Approach", IEEE Journal of Microelectromechanical Systems, Dec. 2021, B. Sun†, S. Scholz†, A. Kemper, T. Grap, J. Knoch*, vol. 60, no. 6, pp. 950-957, doi: 10.1109/JMEMS.2021.3115715. (†共同一作)
  • 10、"Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system", Journal of Vacuum Science & Technology B, Sep. 2021, B. Sun, T. Grap, T. Frahm, J. Knoch*, vol. 39, no. 5, pp. 052601, doi: 10.1116/6.0001161.
  • 11、"On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors", IEEE Transactions on Electron Devices, July 2021, B. Sun, B. Richstein, P. Liebisch, T. Frahm, S. Scholz, J. Trommer, T. Mikolajick, J. Knoch*, vol. 68, no. 7, pp. 3684-3689, doi: 10.1109/TED.2021.3081527.
  • 12、"Spin qubits confined to a silicon nano-ridge", Applied Sciences, Sep. 2019, J. Klos†, B. Sun†, J. Beyer, S. Kinder, L. Hellmich, J. Knoch, L. Schreiber*, vol. 9, no. 18, pp. 3823, doi: 10.3390/app9183823. (†共同一作)
  • 13、"Employing CMOS technology on silicon for a scalable electron-spin qubit architecture", Bulletin of the American Physical Society, Mar. 2021, Jan Klos, Bin Sun, Jacob Beyer, Sebastian Kindel, Lena Hellmich, Joachim Knoch, Lars Schreiber, vol. 2021, pp. A30. 004.
  • 14、"Alternatives for Doping in Nanoscale Field-Effect Transistors", physica status solidi (a), Jan. 2018, F. Riederer, T. Grap, S. Fischer, M. Müller, D. Yamaoka, B. Sun, C. Gupta, K. Klaus, J. Knoch*, vol. 215, no. 7, pp. 1700969, doi: 10.1002/pssa.201700969.