孙斌,苏州大学优秀青年学者,讲师。2022年以德国博士论文最优等级(summa cum laude)毕业于亚琛工业大学(RWTH Aachen University),获自然科学博士学位(Dr. rer. nat.)。师从国际知名TFET器件专家Joachim Knoch教授,研究方向为后摩尔新型硅基场效应晶体管,集成电路制造,计算机工艺器件模拟。近年来在IEEE TED, JVST-B, IEEE JMEMS, pss-a等微电子领域权威期刊发表学术论文7篇,其中一作文章4篇,并受邀担任IEEE JMEMS, Scientific Reports等期刊审稿人。获Borchers-Plakette奖章(德国优秀博士论文奖),主持国家自然科学基金-青年基金项目1项。


代表作:

  • B. Sun, B. Richstein, P. Liebisch, T. Frahm, S. Scholz, J. Trommer, T. Mikolajick, J. Knoch*, “On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors,” in IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3684-3689, July 2021, doi: 10.1109/TED.2021.3081527.

  • B. Sun, T. Grap, T. Frahm, S. Scholz, J. Knoch*, “Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system,” in Journal of Vacuum Science&Technology B, vol. 39, no. 5, pp. 052601, Sep. 2021, doi: 10.1116/6.0001161.

  • B. Sun, S. Scholz†, A. Kemper, T. Grap, J. Knoch*, Modeling and Prediction of Hydrogen Morphological Evolution in Silicon Utilizing a Level-Set Approach, in IEEE Journal of Microelectromechanical Systems, vol. 30, no. 6, pp. 950-957, Dec. 2021, doi: 10.1109/JMEMS.2021.3115715. (†共同一作)


新闻报道:

注:Journal of Vacuum Science & Technology总主编Dr. Eray Aydil教授在twitter上推荐了关于改进电子束蒸发方面的工作。


链接:https://www.epowerjournal.com/2024/01/11/schottky-diode-drain-contact-interferences-with-sub-linearity/

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