陶雪慧 女、博士、副教授、硕士生导师。
2012 年毕业于香港城市大学，电子工程系，电力电子技术专业，获博士学位。主要从事高频磁性元件设计、工程电磁场、开关电源系统的研究工作。曾主持国家自然科学基金青年基金1项，主持江苏省自然科学基金青年基金1项，主要参与国家自然科学基金青年基金1项。获国家授权发明专利9项，已在国际国内核心刊物发表论文20余篇。获得国际电气电子工程师学会（IEEE IAS）年度优秀学术论文奖1次，获得苏州市政府颁发的自然科学类优秀科技论文奖2次。
发表论文：
Transaction/Journal Papers:
[1]Qiwen Du and Xuehui Tao*，“An on-Resistance Model for Silicon Carbide Merged p-i-n Schottky (MPS) Diodes”, IEEE Transactions on Electron Devices.2020.
[2]Xuehui Tao and Yong Yang, “Theoretical Modeling of Luminous Efficacy for High-Power White Light-Emitting Diodes”, Chinese Physics Letters, Vol. 34, No. 3, 038531, 2017.
[3]Xuehui Tao and Bin Yang, “An Estimation Method for the Efficiency of Light-Emitting Diode (LED) Devices”, Journal of Power Electronics, Vol. 16, No. 2, PP. 815-822, March 2016.
[4]Xuehui Tao, “Performance Characterization and Theoretical Modeling of Emitted Optical Power for High-Power White-LED Devices”, IEEE Transactions On Electron Devices, Vol. 62, No. 5, pp. 1511-1515, May 2015.
[5]Xuehui Tao and Dongli Zhang, “Thermal Parameter Extraction Method for Light-Emitting Diode (LED) Systems”, IEEE Transactions On Electron Devices, Vol. 60, No. 6, pp. 1931-1937, June 2013.
[6]Xuehui Tao and Shu-Yuen Ron Hui, “Dynamic Photo-Electro-Thermal Theory for Light-Emitting Diode (LED) Systems”, IEEE Transactions on Industrial Electronics, Vol. 59, No. 4, pp.1751-1759, April 2012. [IEEE IAS Prize Paper Award]
[7]Xuehui Tao, Huanting Chen, Sinan Li and Shu-Yuen Ron Hui, “A Non-Contact Method for the Prediction of Both Internal Thermal Resistance & Junction Temperature of White Light-Emitting Diodes”, IEEE Transactions on Power Electronics, Vol. 27, No. 4, pp.2184-2192, April 2012.
[8]Huanting Chen, Xuehui Tao and Shu-Yuen Ron Hui, “Estimation of Optical Power and Heat Dissipation Coefficient for the Photo-Electro-Thermal Theory for LED Systems”, IEEE Transactions on Power Electronics, Vol.27, No.4, pp.2176-2183, April 2012.
[9]Shu-Yuen Ron Hui, Huanting Chen and Xuehui Tao, “An Extended Photo-Electro-Thermal Theory for LED Systems: A Tutorial from Device Characteristic to System Design for General Lighting” IEEE Transactions on Power Electronics, Vol. 27, No.11, pp.4571-4583, November 2012.
[10]Shu-Yuen Ron Hui, SinanLi, Xuehui Tao, Wu Chen, Ng. W. M, “A Novel Passive Offline LED Driver with Long Lifetime”, IEEE Transactions on Power Electronics, Vol. 25, pp. 2665-2672, Oct. 2010.
[11]杜启雯，陶雪慧*,SiC MPS二极管反向特性模型，中国核心期刊：电力电子技术，2020年3月，第54卷第3期，138-140。
[12]杜启雯，陶雪慧*，4H-SiC混合PiN/Schottky二极管电阻建模，中国核心期刊：电力电子技术，2019年9月，第53卷第9期，117-120。
[13]沈黎韬，陶雪慧*，杨斌，CCM模式BOOST和SEPIC功率因数校正电路对比分析，中国核心期刊：电源技术与应用，2017年，第43卷第10期，149-152。
[14]沈黎韬，陶雪慧*，杨斌，基于DSP的单ADC数字功率因数校正器研究，中国核心期刊：现代电子技术，2017年，第10卷第14期，158-166。
[15]杨斌，陶雪慧*，沈黎韬，基于CLL谐振的大功率多路输出LED驱动器，中国核心期刊：电源技术与应用，2016年，第42卷第12期，134-138。
[16]陶雪慧，许建平，吴松荣，无传感器电流型控制开关电源斜坡补偿研究，中国核心期刊：电工电能新技术，2007年10月，第26卷，第4期，75-80。
[17]陶雪慧，许建平，无电流检测开关电源控制方法的研究，中国核心期刊：机车电传动.2008年5月，第3期，1-4。
[18]夏逸骁，陶雪慧*，碳化硅MOSFET结电容模型，电力电子技术，2020，54（10）：13-16.
[19]夏逸骁，陶雪慧*，碳化硅MOSFET开关瞬态模型，电子设计工程，2021，29（1）：152-156.
[20]夏逸骁，陶雪慧*，基于buck电路的SiC SBD模型，电力电子技术，2021，55（9）：153-156.
IEEE Proceedings/Conference Papers:
[21]Yixiao Xia and Xuehui Tao*, “A precise model of power SiC Schottky barrier diodes for circuit simulation”,2021IEEE 4th International Electrical and Energy Conference (CIEEC2021), Wuhan, China, May 28-30, 2021.
[22]Qiwen Du, and Xuehui Tao*, “The on-Resistance Model of Silicon Carbide Merged Pin Schottky (MPS) Diodes”, 2019 International Conference on Power, Electrical Engineering and Automation (PEEA 2019), Xian, China, August 24-25, 2019.
[23]Qiwen Du, and Xuehui Tao*, “ Reverse Characteristic Model of SiC MPS Diode”, The 4th International Conference on Electrical and Information Technologies for Rail Transportation 2019 (EITRT 2019). Beijing, China, October 25-27, 2019.
[24] Bin Yang, Xuehui Tao*, and Litao Shen, “Analysis and Design of CLL Resonant Multi-Channel LED Driver with Balance Capacitor”, 2016 IEEE 8th International Power Electronics and Motion Control Conference (IPEMC-ECCE Asia), Hefei, China, 22-26 May 2016.
[25]Xuehui Tao, and Bin Yang, “Study of Junction Temperature Effect on Electrical Power of Light-Emitting Diode (LED) Devices”, 2015 IEEE 22nd International Symposium on the Physical and Failure Analysis of Integrated Circuits, pp. 430-433, Hsinchu, Taiwan, 29 June-2July 2015.
[26]Xuehui Tao, Huanting Chen and Shu-Yuen Ron Hui, “Modeling of Junction Temperature and Forward Voltage of LED Devices With Externally Measurable Variables”, IEEE Proceedings of2012Energy Conversion Congress and Exposition (ECCE), Raleigh, North CarolinaAltanta, USA, 2012.
[27]Xuehui Tao and Shu-Yuen Ron Hui, “A General Photo-Electro-Thermo
-Temporal Theory for Light-Emitting Diode (LED) Systems”, IEEE Proceedings of 2010Energy Conversion Congress and Exposition (ECCE), pp. 184-191, September, Altanta, USA, 2010.
[28]Xuehui Tao and Shu-Yuen Ron Hui, “Estimation of Internal Junction Temperature & Thermal Resistance of Light-Emitting Diodes Using External Luminous Flux Measurements”, IEEE Proceedings of 2010 Energy Conversion Congress and Exposition (ECCE), pp. 179-183, September, Altanta, USA, 2010.
[29]Shu-Yuen Ron Hui, Sinan Li, Xuehui Tao, Wu Chen, Ng. W. M., “A Novel Passive off-Line Light-Emitting Diode (LED) Driver with Long Lifetime” , IEEE Proceedings of2010 Applied Power Electronics Conference and Exposition (APEC), pp. 594-600, USA, Feb. 2010.
[30]Xuehui Tao and Jianping Xu, “Integrated CMOS Current-Sensing Circuit for Current-Mode Boost Converters”, IEEEInternational Conference on Industrial Technology (ICIT) 2008, pp. 1-5, Apr. 2008.
[31]Xuehui Tao and Jianping Xu, “Integrated Current-Sensing Circuit with Offset-Current Cancellation for Boost Converters”, IEEE Proceedings of2008 International Conference on Communications, Circuits and Systems (ICCCAS), pp. 1328-1331, May 2008.
[32]陶雪慧，许建平，吴松荣. 无传感器电流型控制开关电源斜坡补偿研究. 中国电源学会第十七届学术年会. 2007年10月
发明专利情况：
1. 专利名称: 一种新型提取LED系统热容和热时间常数的方法,（专利号：ZL201310180105.5）
2. 专利名称: 基于LED系统的照明效率和光通量的预测方法, （专利号：ZL201410078562.8）
3. 专利名称: LED器件的结温温度和热功率的预测方法, （专利号：ZL201510096332.9）
4. 专利名称: LED器件光功率的预测方法,（专利号：ZL201410817584.1）
5. 专利名称：一种考虑实际匝长的圆导线型高频变压器设计方法及装置，（专利号：202310132378.6）
6. 专利名称：一种耦合环形电感器寄生电容计算方法，（专利号：202410101091.1）
7. 专利名称：基于交流电阻的圆导线型高频变压器工作效率评估方法，（专利号：202310132519.4）
8. 专利名称：圆导线型高频变压器瞬时功率和漏感大小评估方法及装置，（专利号：202310132534.9）
9. 专利名称：基于直流电阻的圆导线型绕组高频变压器设计方法及装置，（专利号：202310132948.1）