曹冰

发布时间：2023-09-18浏览次数：634

  • 1、Study on nucleation and growth mode of GaN on patterned graphene by epitaxial lateral overgrowth, Crystal Growth & Design,Crystal Growth & Design,2023,23, pp5541-5547
  • 2、Modulation of Remote Epitaxial Heterointerface by Graphene-Assisted Attenuative Charge Transfer,ACS Nano,2023,17, pp4023-4033
  • 3、Growth mechanism of exfoliable GaN by van der Waals epitaxy on wrinkled hexagonal boron nitride,Crystal Growth & Design,2023,23, pp2196-2202
  • 4、A self-disappear-mask for epitaxial lateral overgrowth of GaN films,Journal of Crystal Growth,2023,610 (2023), 127149
  • 5、Optical and microstructural characterization of Micro-LED with sidewall treatment,Journal of Physics D: Applied Physics,2022,55 (2022), 435103
  • 6、Optical properties of AlGaN-based deep-ultraviolet LED materials grown on graphene/SiC,Materials Letters,2022,317 (2022), 132104
  • 7、Long-Range Orbital Hybridization in Remote Epitaxy: The Nucleation Mechanism of GaN on Different Substrates via Single-Layer Graphene,ACS Applied Materials and interfaces,2022,14, 2263-2274
  • 8、Direct van deer Waals epitaxy of multiband-emitting InGaN-based LEDs on graphene for phosphor-free white light illumination,Journal of Alloys and Compounds,2022,902 (2022), 163712
  • 9、Microstructural and optical properties of stress-free GaN films on graphene prepared by PECVD,Japanese Journal of Applied Physics,2021, 60(3): 035502
  • 10、Electrochemical liftoff of freestanding GaN by a thick highly conductive sacrificial layer grown by HVPE,Chinese Physics B (Chin. Phys. B),2021,30(6): 067306
  • 11、ouble-triangular whispering-gallery mode lasing from a hexagonal GaN microdisk grown on graphene,Journal of Materials Science & Technology,2020,53 (2020), 140-145
  • 12、Direct van der Waals epitaxy of stress-free GaN films on PECVD grown graphene,Journal of Alloys and Compounds,2020,844 (2020), 155870
  • 13、Origin of microstructural defects in single-crystalline films van der Waals epitaxy on graphene,Journal of Crystal Growth,2020,536(2020), 125588
  • 14、Evolution of morphology and defects of graphene with growth parameters by PECVD,Mater. Res. Express,2020,7 (2020) 035025
  • 15、Temperature dependence of Raman scattering in defect-free AlN nanorods grown on multilayer graphene by van der Waals epitaxy,Mater. Res. Express,2020,7 (2020), 025039
  • 16、A self-assembled graphene nanomask for the epitaxial growth of nonplanar and planar GaN,CrystEngComm,2019,21, 6109–6117
  • 17、In-plane misfits localization in GaN via graphene ELOG technology,CrystEngComm,2019,21, 902–907
  • 18、The interface of epitaxial nanographene on GaN by PECVD,AIP Advances,2019,095060 (2019)
  • 19、Transferable GaN Films on Graphene/SiC by van der Waals Epitaxy for Flexible Devices,Phys. Status Solidi A,2019,2019, 1801027
  • 20、Microstructural and optical properties of GaN buffer layers grown on graphene,Japanese Journal of Applied Physics,2018,57, 085502
  • 21、Growth Model of van der Waals Epitaxy of Films: A Case of AlN Films on Multilayer Graphene/SiC,ACS Applied Materials and interfaces,2017,9, pp44001-44009
  • 22、Metasurface integrated high energy efficient and high linearly polarized InGaN-GaN light emitting diode,Nanoscale,2017,9, 9104
  • 23、Evolution of TDs in GaN ELOG on GaN templates using self-organized graphene as a nano-mask,Applied Physics Letters,2017,111, 102105 (2017)
  • 24、All-metal flexible large-area multiband waveplate,Optics Express,2017,25(7), pp8245-8254
  • 25、High linearly polarized white light emission from InGaN light-emitting diode with nano-gratings integrated fluorescent ceramics,Applied Physics Express,2017,10, 012101 (2017)
  • 26、Growth of low threading dislocation density GaN on graphene by Hydride Vapor Phase Epitaxy,Japanese Journal of Applied Physics,2017,56, 030308 (2017)
  • 27、All-dielectric metasurface circular dichroism waveplate, Scientific Reports,2017, 7:41893, 2017
  • 28、Design and fabrication of silicon-based linear polarizer with multilayer nano-gratings operating in infrared region,Optical Engineering,2017,56(1), 017111, 2017
  • 29、Graphene-based optical absorbers in middle-infrared wavelengths,Proc. of SPIE,2017,Vol. 10244, 2017, 1024426
  • 30、Stress analysis of transferable crack-free Gallium nitride microrods grown on graphene/SiC substrate,Materials Letters,2016,185 (2016) 315–318
  • 31、Raman spectra investigation of the defects of chemical vapor deposited multilayer graphene and modified by oxygen plasma treatment,Superlattices and Microstructures,2016,99 (2016) 125-130
  • 32、High linearly polarized light emission from GaN-based light-emitting diode with multilayer dielectric/metal wire-grid structure, Applied Physics Letters,2014,105 (15), 151113 (2014)