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2. Zirui Wang, Yuguang Zhu, Ronghao Ren, Tianyu Zhang, Yang Peng, Yongguang Wang, Xiaolong Lu, Chuanyang Wang. Insight into the atomic-scale material removal of 4H-SiC electrochemical mechanical polishing (ECMP) using graphene oxide. Tribology International. 2025,210:110803 (IF: 6.2 中科院一区 ToP)
3. Zirui Wang, Yuguang Zhu, Yang Peng, Tianyu Zhang , Yongguang Wang, Qingsheng Liu, Haidong He, Chuanyang Wang. Cavitation-driven nanosecond laser irradiation assisted chemical–mechanical-polishing (CMP) for atomic-scale material removal of 4H-SiC. Optics and Laser Technology. 2025, 191:113328(IF: 4.6 中科院二区 ToP)
4. Yang Peng,Zirui Wang,Qingyu Yao,Feng Cheng,Tianyu Zhang,Yuguang Zhu,Yongguang Wang,Chuanyang Wang. Revealing Mechanisms of an Eco-Friendly GaN Electrochemical Mechanical Removal Process Modified with Green Fenton Reaction.Langmuir.2025, (IF: 3.608 中科院二区)
5. Xiaoman Shi, Hongwei Li, Huaijun Guan, Dongsheng Li, Chuanyang Wang, Yongguang Wang, Xiaolong Lu. Tribological behavior of polydopamine-modified boron nitride nanoplatelets-reinforced silicate ceramic coatings.Ceramics International. 2025, 51(12):16224-16233(IF: 5.2 中科院一区ToP)
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8. Guang Xia, Zirui Wang , Qingyu Yao, Ping Sun, Huaijun Guan,Yongguang Wang, Cheng Fan, Da Bian, Dog Zhao, Yongwu Zhao. Modeling of material removal rate considering the chemical mechanical effects of lubricant, oxidant, and abrasive particles for aluminum chemical mechanical polishing at low pressure. Wear,2023, 530–531:205023 (IF: 5.0 中科院一区ToP)
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12. Huaijun Guan , Shiwei Niu , Yongguang Wang, et al. Synergetic effect of H2O2 and PTA on the microscratch and indentation of GaN wafer with electricity. Tribology International, 2021, 158: 106941 (IF: 6.2 中科院一区 ToP)
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15. Liu Y, Bian D, Zhao Y, Wang Y. Anti-corrosion performance of chemically bonded phosphate ceramic coatings reinforced by nano-TiO2. Journal of the Mechanical Behavior of Biomedical Materials, 2018,86208. (IF: 3.9 中科院二区)
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17. Wang Y, Chen Y, Zhao D, Lu X, Liu W, Qi F, Chen Y. Deformation mechanism of CrN/nitriding coated steel in wear and nano-scratch experiments under heavy loading conditions. Applied Surface Science, 2018,447100. (IF: 6.7 中科院一区 ToP)
18. Wang Y, Chen Y, Zhao Y, Min P, Qi F, Liu X, Zhao D. Chemical mechanical planarization of Al alloy in alkaline slurry at low down pressure. Journal of Materials Science-Materials in Electronics, 2017,28(4):3364. (SCI/EI, IF: 2.324)
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21. Wang Y, Chen Y, Qi F, Xing Z, Liu W. A molecular-scale analytic model to evaluate material removal rate in chemical mechanical planarization considering the abrasive shape. Microelectronic Engineering, 2015,13454. (SCI/EI, IF:2.020)
22. Wang Y, Chen Y, Zhao Y. Chemical mechanical planarization of silicon wafers at natural pH for green manufacturing. International Journal of Precision Engineering and Manufacturing, 2015,16(9):2049. (SCI/EI, IF: 1.661)
23. Wang Y, Zhao YW, Chen X. Chemical Mechanical Planarization from Macro-Scale to Molecular-Scale. Materials and Manufacturing Processes, 2012,27(6):641. (SCI/EI, IF:2.669)
24. Wang Y, Ni Z, Chen G, Chen A, Su Y, Zhao Y. Effect of the number of layers on the bond strength for multi-layer brittle coating-substrate system. Science China-Technological Sciences, 2012,55(10):2936. (IF: 4.6 中科院二区)
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27. Wang YG, Zhang LC. On the Chemo-Mechanical Polishing for Nano-Scale Surface Finish of Brittle Wafers. Recent Patents On Nanotechnology, 2010,4(2):70. (SCI/EI, IF: 1.475)
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31. Wang Y, Zhao Y. Modeling the effects of oxidizer, complexing agent and inhibitor on material removal for copper chemical mechanical polishing. Applied Surface Science, 2007,254(5):1517. (IF: 6.7 中科院一区 ToP)
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33. Wang Y, Zhao Y, Gu J. A new nonlinear-micro-contact model for single particle in the chemical-mechanical polishing with soft pad. Journal of Materials Processing Technology, 2007,183(2-3):374. (IF: 6.3 中科院一区 ToP)
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