1.Rui Zhu,Tianyu Zhang , Qingyu Yao , Yang Peng, Feng Cheng, Zirui Wang, Yongguang Wang, Xiaolong Lu, Chuanyang Wang, Yongwu Zhao. Atomistic mechanisms of SiC electrochemical mechanical polishing in aqueous H2O2: A ReaxFF molecular dynamics study.Journal of Manufacturing Processes.2025,136: 56-67 （IF: 6.262 中科院一区ToP）
2.Zirui Wang, Yuguang Zhu, Ronghao Ren, Tianyu Zhang, Yang Peng, Yongguang Wang, Xiaolong Lu, Chuanyang Wang. Insight into the atomic-scale material removal of 4H-SiC electrochemical mechanical polishing (ECMP) using graphene oxide. Tribology International. 2025，210：110803 （IF: 6.2 中科院一区 ToP）
3.Zirui Wang, Yuguang Zhu, Yang Peng, Tianyu Zhang , Yongguang Wang, Qingsheng Liu, Haidong He, Chuanyang Wang. Cavitation-driven nanosecond laser irradiation assisted chemical–mechanical-polishing (CMP) for atomic-scale material removal of 4H-SiC. Optics and Laser Technology. 2025, 191:113328（IF: 4.6 中科院二区 ToP）
4.Yang Peng,Zirui Wang,Qingyu Yao,Feng Cheng,Tianyu Zhang,Yuguang Zhu,Yongguang Wang,Chuanyang Wang. Revealing Mechanisms of an Eco-Friendly GaN Electrochemical Mechanical Removal Process Modified with Green Fenton Reaction.Langmuir.2025, （IF: 3.608 中科院二区）
6.Zirui Wang, Yongguang Wang, Haidong He, Feng Chen, Jiacen Shi, Yang Peng, Tianyu Zhang, Rui Zhu. Nanosecond laser irradiation assisted chemical mechanical polishing (CMP) process for promoting material removal of single crystal 4H–SiC. Ceramics International.2024,50(19): 34702-34709.（IF: 5.2 中科院一区ToP）
7. Wang Zirui, Yao Qingyu, Sun Ping, Wang Yongguang, Fan Cheng. Friction Properties and Mechanism of Aluminum Sheets Under an Eco-Friendly CMCS Lubrication Condition. TRIBOLOGY LETTERS. 2024,72:27
8.Guang Xia, Zirui Wang , Qingyu Yao, Ping Sun, Huaijun Guan,Yongguang Wang, Cheng Fan, Da Bian, Dog Zhao, Yongwu Zhao. Modeling of material removal rate considering the chemical mechanical effects of lubricant, oxidant, and abrasive particles for aluminum chemical mechanical polishing at low pressure. Wear,2023, 530–531:205023 （IF: 5.0 中科院一区ToP)
9.Cheng Fan, Kaixuan Liu, Yongguang Wang, Lei Zhang, and Lining Sun.Nano-indentation and nano-scratch of flexible intraocular lens material at the molecular scale. Acta Mechanica Sinica，2023,39： 122331 （IF: 3.5 中科院二区）
11.Zhao Ding, Shiwei Niu, Qingyu Yao, Yongguang Wang, Huaijun Guan, Dong Zhao and Zexin Yu. Effects of Chemical-Electrical and Mechanical Parameters on Electrical-induced Chemical Mechanical Polishing of GaN. ECS Journal of Solid State Science and Technology, 2021,10 (12):124004
12.Huaijun Guan , Shiwei Niu , Yongguang Wang, et al. Synergetic effect of H2O2 and PTA on the microscratch and indentation of GaN wafer with electricity. Tribology International, 2021, 158: 106941 （IF: 6.2 中科院一区 ToP）
13.Sun P, Wang Y, Liu P, et al. Synergetic effect of 1,2,4-triazole and glycine on chemical mechanical planarization of aluminum at low polishing pressure in an eco-friendly slurry[J]. ECS Journal of Solid State Science and Technology, 2020, 9(3): 034003. （SCI/EI, IF: 2.142）
14.Wang Y, Zhu Y, Zhao D, Bian D. Nanoscratch of aluminum in dry, water and aqueous H2O2 conditions. Applied Surface Science, 2019,464229. （IF: 6.7 中科院一区 ToP）
15.Liu Y, Bian D, Zhao Y, Wang Y. Anti-corrosion performance of chemically bonded phosphate ceramic coatings reinforced by nano-TiO2. Journal of the Mechanical Behavior of Biomedical Materials, 2018,86208. （IF: 3.9 中科院二区）
16.Zhao D, Wang C, Chen Y, Wang Y. Phase composition, structural, and plasma erosion properties of ceramic coating prepared by suspension plasma spraying. International Journal of Applied Ceramic Technology, 2018,15(6):1388. （SCI/EI, IF: 1.165）
17.Wang Y, Chen Y, Zhao D, Lu X, Liu W, Qi F, Chen Y. Deformation mechanism of CrN/nitriding coated steel in wear and nano-scratch experiments under heavy loading conditions. Applied Surface Science, 2018,447100. （IF: 6.7 中科院一区 ToP）
18.Wang Y, Chen Y, Zhao Y, Min P, Qi F, Liu X, Zhao D. Chemical mechanical planarization of Al alloy in alkaline slurry at low down pressure. Journal of Materials Science-Materials in Electronics, 2017,28(4):3364. （SCI/EI, IF: 2.324）
19.Wang Y, Chen Y, Zhao Y, Zhao D, Zhong Y, Qi F, Liu X. A reinforced organic-inorganic layer generated on surface of aluminium alloy by hybrid inhibitors. Journal of Molecular Liquids, 2017,225510. （IF: 6.0 中科院二区）
20.Wang Y, Chen Y, Qi F, Zhao D, Liu W. A material removal model for silicon oxide layers in chemical mechanical planarization considering the promoted chemical reaction by the down pressure. Tribology International, 2016,93(A):11. （IF: 6.2 中科院一区 ToP）
21.Wang Y, Chen Y, Qi F, Xing Z, Liu W. A molecular-scale analytic model to evaluate material removal rate in chemical mechanical planarization considering the abrasive shape. Microelectronic Engineering, 2015,13454. （SCI/EI, IF：2.020）
22.Wang Y, Chen Y, Zhao Y. Chemical mechanical planarization of silicon wafers at natural pH for green manufacturing. International Journal of Precision Engineering and Manufacturing, 2015,16(9):2049. （SCI/EI, IF: 1.661）
23.Wang Y, Zhao YW, Chen X. Chemical Mechanical Planarization from Macro-Scale to Molecular-Scale. Materials and Manufacturing Processes, 2012,27(6):641. （SCI/EI, IF：2.669）
24.Wang Y, Ni Z, Chen G, Chen A, Su Y, Zhao Y. Effect of the number of layers on the bond strength for multi-layer brittle coating-substrate system. Science China-Technological Sciences, 2012,55(10):2936. （IF: 4.6 中科院二区）
25.Wang YG, Zhang LC, Biddut A. Chemical effect on the material removal rate in the CMP of silicon wafers. Wear, 2011,270(3-4):312. （SCI/EI, IF: 5.0中科院一区 ToP）
26.Wang Y, Zhao Y, An W, Ni Z, Wang J. Modeling effects of abrasive particle size and concentration on material removal at molecular scale in chemical mechanical polishing. Applied Surface Science, 2010,257(1):249. （IF: 6.7 中科院一区 ToP）
27.Wang YG, Zhang LC. On the Chemo-Mechanical Polishing for Nano-Scale Surface Finish of Brittle Wafers. Recent Patents On Nanotechnology, 2010,4(2):70. （SCI/EI, IF: 1.475）
28.Wang Y, Zhao Y, Jiang J, Li X, Bai J. Modeling effect of chemical-mechanical synergy on material removal at molecular scale in chemical mechanical polishing. Wear, 2008,265(5-6):721. （SCI/EI, IF: 5.0中科院一区 ToP）
29.Wang Y, Zhao Y. Research on the molecular scale material removal mechanism in chemical mechanical polishing. Science Bulletin （原Chinese Science Bulletin）, 2008,53(13):2084.（IF: 18.9 中科院一区 ToP）
30.Wang Y, Zhao Y, Li X. Modeling the effects of abrasive size, surface oxidizer concentration and binding energy on chemical mechanical polishing at molecular scale. Tribology International, 2008,41(3):202. （IF: 6.2 中科院一区 ToP）
31.Wang Y, Zhao Y. Modeling the effects of oxidizer, complexing agent and inhibitor on material removal for copper chemical mechanical polishing. Applied Surface Science, 2007,254(5):1517. （IF: 6.7 中科院一区 ToP）
32.Wang Y, Zhao Y, An W, Wang J. Modeling the effects of cohesive energy for single particle on the material removal in chemical mechanical polishing at atomic scale. Applied Surface Science, 2007,253(23):9137. （IF: 6.7 中科院一区 ToP）
33.Wang Y, Zhao Y, Gu J. A new nonlinear-micro-contact model for single particle in the chemical-mechanical polishing with soft pad. Journal of Materials Processing Technology, 2007,183(2-3):374. （IF: 6.3 中科院一区 ToP）
