孙斌
，2022年博士毕业于德国亚琛工业大学（RWTH Aachen），获最高等级拉丁文学位荣誉summa cum laude，以及博士最高荣誉Borchers Plakette奖章。师从国际知名TFET器件专家Joachim Knoch教授，研究方向为后摩尔新型硅基场效应晶体管，集成电路制造，计算机工艺及器件模拟。近年来在IEEE TED, JVST-B, IEEE JMEMS, pss-a等微电子领域权威期刊发表多篇学术论文，并受邀担任IEEE JMEMS, Scientific Reports等期刊审稿人。主持国自然-青年科学基金项目（C类）1项。
代表作:
B. Sun, B. Richstein, P. Liebisch, T. Frahm, S. Scholz, J. Trommer, T. Mikolajick, J. Knoch*, “On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors,” in IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3684-3689, July 2021, doi: 10.1109/TED.2021.3081527.
B. Sun, T. Grap, T. Frahm, S. Scholz, J. Knoch*, “Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system,” in Journal of Vacuum Science&Technology B, vol. 39, no. 5, pp. 052601, Sep. 2021, doi: 10.1116/6.0001161.
B. Sun†, S. Scholz†, A. Kemper, T. Grap, J. Knoch*, “Modeling and Prediction of Hydrogen Morphological Evolution in Silicon Utilizing a Level-Set Approach,” in IEEE Journal of Microelectromechanical Systems, vol. 30, no. 6, pp. 950-957, Dec. 2021, doi: 10.1109/JMEMS.2021.3115715. (†共同一作)
孙斌，2022年博士毕业于德国亚琛工业大学（RWTH Aachen），获最高等级拉丁文学位荣誉summa cum laude，以及博士最高荣誉Borchers Plakette奖章。师从国际知名TFET器件专家Joachim Knoch教授，研究方向为后摩尔新型硅基场效应晶体管，集成电路制造，计算机工艺及器件模拟。近年来在IEEE TED, JVST-B, IEEE JMEMS, pss-a等微电子领域权威期刊发表多篇学术论文，并受邀担任IEEE JMEMS, Scientific Reports等期刊审稿人。主持国自然-青年科学基金项目（C类）1项。
代表作:
B. Sun, B. Richstein, P. Liebisch, T. Frahm, S. Scholz, J. Trommer, T. Mikolajick, J. Knoch*, “On the Operation Modes of Dual-Gate Reconfigurable Nanowire Transistors,” in IEEE Transactions on Electron Devices, vol. 68, no. 7, pp. 3684-3689, July 2021, doi: 10.1109/TED.2021.3081527.
B. Sun, T. Grap, T. Frahm, S. Scholz, J. Knoch*, “Role of electron and ion irradiation in a reliable lift-off process with electron beam evaporation and a bilayer PMMA resist system,” in Journal of Vacuum Science&Technology B, vol. 39, no. 5, pp. 052601, Sep. 2021, doi: 10.1116/6.0001161.
B. Sun†, S. Scholz†, A. Kemper, T. Grap, J. Knoch*, “Modeling and Prediction of Hydrogen Morphological Evolution in Silicon Utilizing a Level-Set Approach,” in IEEE Journal of Microelectromechanical Systems, vol. 30, no. 6, pp. 950-957, Dec. 2021, doi: 10.1109/JMEMS.2021.3115715. (†共同一作)
